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首页> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Role of volume versus defects in the electrical resistivity of lattice-distorted V(001) ultrathin films
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Role of volume versus defects in the electrical resistivity of lattice-distorted V(001) ultrathin films

机译：体积与缺陷在晶格畸变V（001）超薄膜的电阻率中的作用

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摘要

4 nm thick V layers grown by triode sputtering on MgO(001) single crystals and capped with MgO exhibit a perfect epitaxy accompanied by a tetragonal distortion and an unexpected volume compression that increases with the V deposition temperature. The electrical resistivity follows a deposition temperature dependence with these structural modifications, decreasing by an order of magnitude across the temperature range studied. Total energy ab initio calculations rule out electronic structure changes and/or oxygen interface diffusion as responsible for the structure variation. Calculations of the ballistic conductance for the epitaxial V films do not reproduce the resistivity-volume correlation, implying a diffusive electron transport mechanism in the films, despite their high crystallinity. Instead, we assign the origin of the electrical behavior to the presence of growth induced defects in the V lattice, whose density is higher in films deposited at low temperature, and decreases as deposition temperature increases. These results extend the previous findings in volume expanded H loaded Fe/V and Mo/V superlattices to simpler structures where the H content is negligible and, additionaly, all the electronic transport is confined within the V film.
机译：通过三极管溅射在MgO（001）单晶上生长并盖上MgO的4 nm厚V层显示出完美的外延，伴随四边形畸变和意外的体积压缩，其随V沉积温度的增加而增加。电阻率随沉积温度的变化而变化，在所研究的温度范围内降低了一个数量级。从头算起的总能量排除了导致结构变化的电子结构变化和/或氧界面扩散。尽管外延V膜具有高结晶度，但计算外延V膜的弹道电导率并不能重现其电阻率-体积相关性，这意味着在膜中存在扩散电子传输机制。取而代之的是，我们将电行为的起源归因于V晶格中生长引起的缺陷的存在，该缺陷在低温下沉积的薄膜中密度更高，并且随着沉积温度的升高而降低。这些结果将先前的H膨胀Fe / V和Mo / V超晶格的体积扩展到了H含量可忽略不计的简单结构，此外，所有电子传输都被限制在V膜内。

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