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首页> 外文期刊>Physical review. B, Condensed Matter And Materals Physics >Electronic structure and femtosecond electron transfer dynamics at noble metal/tris-(8-hydroxyquinoline) aluminum interfaces
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Electronic structure and femtosecond electron transfer dynamics at noble metal/tris-(8-hydroxyquinoline) aluminum interfaces

机译：贵金属/三（8-羟基喹啉）铝界面的电子结构和飞秒电子转移动力学

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摘要

The electronic structures of tris-(8-hydroxyquinoline) aluminum (Alq_3) on Cu(111) and Au(111) surfaces are studied by using ultraviolet photoelectron spectroscopy and two-photon photoelectron (2PPE) spectroscopy. The work function decreases with increase of the coverage due to surface dipole of 5.1 D along the surface normal. The ionization potential from the highest occupied state 6.38 eV does not depend on the metal substrates used in this study. The anion states of Alq_3 adsorbed is created by photoinduced electron transfer from the metal substrates and are located at 2.85 and 3.71 eV above the Fermi level on Cu(111) and Au(111) surfaces, respectively. The full width at half maximum of the anion states is 0.2 eV on both the surfaces. Time-resolved 2PPE measurements show that the anion state created by electron transfer from the metal decays with the lifetime of 31 ± 2 fs on Cu(111) and about three times shorter on Au(111). The angle-resolved 2PPE and the coverage dependence of the lifetime of the anion state indicate that the electron transferred from the metal surface is localized at a molecule in the first layer. Thus, the ultrafast electron back transfer from the anion state of Alq_3 in the first layer dominates over the electron hopping to the second layer.
机译：利用紫外光电子能谱和双光子光电子能谱研究了三（8-羟基喹啉）铝（Alq_3）在Cu（111）和Au（111）表面上的电子结构。由于沿表面法线的5.1 D表面偶极子，功函数随覆盖率的增加而降低。来自最高占据态6.38 eV的电离势不取决于本研究中使用的金属基底。吸附的Alq_3的阴离子态是通过光诱导电子从金属基底上转移而产生的，分别位于Cu（111）和Au（111）表面的费米能级之上2.85和3.71 eV。在两个表面上，阴离子状态的半峰全宽为0.2 eV。时间分辨2PPE测量表明，由金属转移电子所产生的阴离子状态在Cu（111）上的寿命为31±2 fs，在Au（111）上的寿命短约三倍。角度分辨的2PPE和阴离子状态寿命的覆盖率依赖性表明，从金属表面转移的电子位于第一层中的分子处。因此，从第一层中的Alq_3的阴离子态开始的超快电子逆向转移在电子跃迁到第二层上起主导作用。

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