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首页> 外文期刊>Physical review. B, Condensed Matter And Materals Physics >Li-induced metal-semiconductor-metal transitions on the Si(111)-(7 x 7) surface: A work function, photoemission, and NMR study
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Li-induced metal-semiconductor-metal transitions on the Si(111)-(7 x 7) surface: A work function, photoemission, and NMR study

机译:Li诱导Si(111)-(7 x 7)表面上的金属-半导体-金属跃迁:功函数,光发射和NMR研究

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摘要

The metallic (7 x 7) reconstructed Si(111)-surface undergoes with increasing Li coverage a metal-semiconductor-metal transition as seen in work function changes, photoelectron spectra and T_1 times determined in NMR experiments. From zero coverage to about 0.12 ML the partly delocalized electron gas of the originally metallic Si(111)-(7 x 7) surface becomes increasingly localized. Around 1 ML Li coverage the surface becomes semiconducting and its properties may be understood in a simple local bonding picture in which the (sp)~3-Si orbitals hybridize with the 2s-Li orbital. A further increase of coverage leads to a metallic overlayer.
机译:金属(7 x 7)重建的Si(111)表面随着Li覆盖率的增加而经历金属-半导体-金属跃迁,这在功函数变化,光电子光谱和NMR实验中确定的T_1时间中可见。从零覆盖率到约0.12 ML,原始金属Si(111)-(7 x 7)表面的部分离域电子气变得越来越局部化。在大约1 ML Li的覆盖范围内,表面变成半导体,其性质可以通过简单的局部键合图来理解,其中(sp)〜3-Si轨道与2s-Li轨道杂化。覆盖率的进一步增加导致金属覆盖层。

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