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首页> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Electronic states of Mn impurities and magnetic coupling between Mn spins in diluted magnetie semiconductors
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Electronic states of Mn impurities and magnetic coupling between Mn spins in diluted magnetie semiconductors

机译：稀磁半导体中Mn杂质的电子态和Mn自旋之间的磁耦合

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Electronic states of single Mn impurities and magnetic couplings between Mn spins in diluted magnetic semiconductors have been studied systematically. It has been clearly shown that in the ground state, Mn spin antiferromagnetically (AFM) couples to surrounding As(N) when p-d hybridization V_(pd) is large and both the hole level E_v and the impurity level E_d are close to the middle of the gap; or very weak ferromagnetically (FM) when V_(pd) is small and both E_v and E_d are deep in the valence band. The Mn spin couplings are Heisenberg AFM for half-filled hole orbits; on the contrary, the couplings between Mn spins are double-exchange-like FM when the hole occupation in the p orbits is away from half-filling, and this accounts for the FM order in Ⅲ-Ⅴ semiconductors. The important role of the antisite As(N) compensation or the hole phase separation for the stability of FM ground state in wide-gap diluted magnetic semiconductors is emphasized.
机译：已经对稀磁性半导体中单一Mn杂质的电子态和Mn自旋之间的磁耦合进行了系统的研究。清楚地表明，在基态下，当pd杂化V_（pd）大且空穴能级E_v和杂质能级E_d都接近于M的中间值时，Mn反铁磁（AFM）耦合到周围的As（N）。差距;或当V_（pd）小且E_v和E_d都在价带深时出现强铁磁（FM）。 Mn自旋耦合器是Heisenberg AFM，用于半填充孔轨道；相反，当p轨道上的空穴占满半填充时，Mn自旋之间的耦合为双交换状FM，这是Ⅲ-Ⅴ类半导体中FM阶的原因。强调了反位As（N）补偿或空穴相分离对于宽禁区稀释磁性半导体中FM基态稳定性的重要作用。

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