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Impurity-induced orbital magnetization in a Rashba electron gas

机译：Rashba电子气中杂质引起的轨道磁化

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摘要

We investigate the induced orbital magnetization density in a Rashba electron gas with magnetic impurities. Relying on classical electrodynamics, we obtain this quantity through the bound currents composed of paramagnetic and diamagneticlike contributions which emerge from the spin-orbit interaction. Similar to Friedel charge ripples, the bound currents and the orbital magnetization density oscillate as a function of distance away from the impurity with characteristic wavelengths defined by the Fermi energy and the strength of the Rashba spin-orbit interaction. The net induced orbital magnetization was found to be of the order of magnitude of its spin counterpart. In addition to the exploration of the impact of the electronic filling of the impurity states, we investigate and analyze the orbital magnetization induced by an equilateral frustrated trimer in various noncollinear magnetic states. On the one hand, we confirm that nonvanishing three-spin chiralities generate a finite orbital magnetization density. On the other hand, higher-order contributions lead to multiple-spin chiralities affecting nontrivially and significantly the overall magnitude and sign of the orbital magnetization. This study substantiates the notion that the orbital degrees of freedom are an essential aspect of nanoscale magnetism, calling for further theoretical and experimental attention.
机译：我们研究了具有磁性杂质的Rashba电子气中的感应轨道磁化密度。依靠经典的电动力学，我们通过由自旋轨道相互作用产生的顺磁性和反磁性类贡献所构成的束缚电流来获得该量。与弗里德尔电荷纹波相似，束缚电流和轨道磁化强度随与杂质的距离变化而变化，该杂质的特征波长由费米能量和拉什巴自旋轨道相互作用的强度定义。发现净感应轨道磁化强度为其自旋对应物的数量级。除了探讨杂质态电子填充的影响外，我们还研究和分析了在各种非共线磁性状态下等边受挫三聚体引起的轨道磁化强度。一方面，我们确认不消失的三轴手性会产生有限的轨道磁化强度。另一方面，较高阶的贡献导致多旋手征性对轨道磁化强度的总体幅度和信号有重要影响。这项研究证实了轨道自由度是纳米级磁性必不可少的观点，需要进一步的理论和实验关注。

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  • 来源
    《Physical review》 |2018年第12期|125420.1-125420.10|共10页
  • 作者

    Juba Bouaziz; Manuel dos Santos Dias; Filipe Souza Mendes Guimaraes; Stefan Bluegel; Samir Lounis;

  • 作者单位

    Peter Gruenberg Institul and Institute for Advanced Simulation, Forschungszentrum Juelich and JARA, 52425 Juelich, Germany;

    Peter Gruenberg Institul and Institute for Advanced Simulation, Forschungszentrum Juelich and JARA, 52425 Juelich, Germany;

    Peter Gruenberg Institul and Institute for Advanced Simulation, Forschungszentrum Juelich and JARA, 52425 Juelich, Germany;

    Peter Gruenberg Institul and Institute for Advanced Simulation, Forschungszentrum Juelich and JARA, 52425 Juelich, Germany;

    Peter Gruenberg Institul and Institute for Advanced Simulation, Forschungszentrum Juelich and JARA, 52425 Juelich, Germany;

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