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Electronic structure of ferromagnetic semiconductor CrGeTe_3 by angle-resolved photoemission spectroscopy

机译:角分辨光发射光谱法研究铁磁半导体CrGeTe_3的电子结构

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摘要

As one of the rare ferromagnetic semiconductors, CrGeTe_3 has recently attracted a great deal of attention as a potential candidate for next-generation high-performance nano-spintronic devices. In this study, by combining density functional theory calculations and angle-resolved photoemission spectroscopy measurements, we explore the electronic structure of CrGeTe_3 directly. The low-lying valence bands are centered around the Γ point and mainly consist of Te 5p orbitals. The majority of the bands show almost no k_z dispersion, consistent with its layered crystalline structure. Due to the higher hopping integral along the out-of-plane direction, however, bands comprised of p- orbitals exhibit significant k_z dispersion. Furthermore, an indirect band gap of 0.38 eV is directly measured by surface electron doping with potassium deposition.
机译:作为稀有的铁磁半导体之一,CrGeTe_3作为下一代高性能纳米自旋电子器件的潜在候选者最近引起了广泛的关注。在这项研究中,通过结合密度泛函理论计算和角度分辨光发射光谱测量,我们直接探索了CrGeTe_3的电子结构。低价价带以Γ点为中心,主要由Te 5p轨道组成。大部分能带几乎没有k_z色散,与其层状晶体结构一致。但是,由于沿面外方向的跳变积分较高,所以由p轨道组成的频带表现出明显的k_z色散。此外,通过表面电子掺杂钾沉积直接测量了0.38 eV的间接带隙。

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  • 来源
    《Physical review》 |2018年第12期|125127.1-125127.6|共6页
  • 作者单位

    National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;

    National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;

    National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;

    National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;

    National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;

    National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;

    National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;

    National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China,Department of Chemical Engineering and Materials Science and Department of Physics and Astronomy, University of California, Irvine, 916 Engineering Tower, Irvine, California 92697, USA;

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