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首页> 外文期刊>Physical review. B, Condensed Matter And Materals Physics >Wire edge dependent magnetic domain wall creep
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Wire edge dependent magnetic domain wall creep

机译：导线边缘相关的磁畴壁蠕变

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摘要

While edge pinning is known to play an important role in sub-μm wires, we demonstrate that strong deviations from the universal creep law can occur in 1 to 20 μm wide wires. Magnetic imaging shows that edge pinning translates into a marked bending of domain walls at low drive and is found to depend on the wire fabrication process and aging. Edge pinning introduces a reduction of domain wall velocity with respect to full films which increasingly dominates the creep dynamics as the wire width decreases. We show that the deviations from the creep law can be described by a simple model including a counter magnetic field which links the width of the wire to the edge dependent pinning strength. This counter field defines a key nonuniversal contribution to creep motion in patterned structures.
机译：尽管已知边缘钉扎在亚微米线中起着重要作用，但我们证明，在1至20微米宽的线中会发生与通用蠕变定律的强烈偏差。磁成像显示边缘钉扎在低速驱动下会转变为畴壁的明显弯曲，并且被发现取决于导线的制造过程和时效。边缘钉扎会导致相对于整个薄膜的畴壁速度降低，这随着线宽的减小而逐渐主导蠕变动力学。我们表明，可以通过一个简单的模型来描述与蠕变定律的偏差，该模型包括将导线的宽度链接到与边沿相关的钉扎强度的反磁场。该计数器字段定义了对图案化结构中蠕变运动的关键非普遍性贡献。

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  • 来源
    《Physical review. B, Condensed Matter And Materals Physics》 |2018年第5期|054417.1-054417.7|共7页
  • 作者

    L. Herrera Diez; V. Jeudy; G. Dunn; A. Casiraghi; Y. T. Liu; M. Voto; G. Agnus; D. Bouville; L. Vila; J. Langer; B. Ocker; L. Lopez-Diaz; D. Ravelosona;

  • 作者单位

    Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Universite Paris-Saclay, C2N Orsay, 91405 Orsay Cedex, France;

    Laboratoire de Physique des Solides, CNRS, Univ. Paris-Sud, Universite Paris-Saclay, 91405 Orsay Cedex, France;

    Istituto Nazionale di Ricerca Metrologica, Strada delle Cacce 91, 10135 Torino, Italy;

    Istituto Nazionale di Ricerca Metrologica, Strada delle Cacce 91, 10135 Torino, Italy;

    Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Universite Paris-Saclay, C2N Orsay, 91405 Orsay Cedex, France;

    Departamento de Fisica Aplicada, Universidad de Salamanca, Plaza de la Merced s. 37008 Salamanca, Spain;

    Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Universite Paris-Saclay, C2N Orsay, 91405 Orsay Cedex, France;

    Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Universite Paris-Saclay, C2N Orsay, 91405 Orsay Cedex, France;

    Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC-Spintec, 38000 Grenoble, France;

    Singulus Technology AG, Hanauer Landstrasse 103, 63796 Kahl am Main, Germany;

    Singulus Technology AG, Hanauer Landstrasse 103, 63796 Kahl am Main, Germany;

    Departamento de Fisica Aplicada, Universidad de Salamanca, Plaza de la Merced s. 37008 Salamanca, Spain;

    Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Universite Paris-Saclay, C2N Orsay, 91405 Orsay Cedex, France;

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