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Transient magnetic-domain-wall ac dynamics by means of magneto-optical Kerr effect microscopy

机译:借助磁光克尔效应显微镜的瞬态磁畴壁交流动力学

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摘要

The domain wall response under constant external magnetic fields reveals a complex behavior where sample disorder plays a key role. Furthermore, the response to alternating magnetic fields has only been explored in limited cases and analyzed in terms of the constant field solution. Here we unveil phenomena in the evolution of magnetic domain walls under the application of alternating magnetic fields within the creep regime, well beyond a small fluctuation limit of the domain wall position. Magnetic field pulses were applied in ultrathin ferromagnetic films with perpendicular anisotropy, and the resulting domain wall evolution was characterized by polar magneto-optical Kerr effect microscopy. Whereas the dc characterization is well predicted by the elastic interface model, striking unexpected features are observed under the application of alternating square pulses: Magneto-optical images show that after a characteristic number of cycles, domain walls evolve toward strongly distorted shapes concomitantly with a modification of domain area. The morphology of domain walls is characterized with a roughness exponent when possible and contrasted with alternative observables which are more suitable for the characterization of this transient evolution. The final stationary convergence as well as the underlying physics is discussed.
机译:在恒定外部磁场下的畴壁响应揭示了一种复杂的行为,其中样品紊乱起着关键作用。此外,仅在有限的情况下研究对交变磁场的响应,并根据恒定磁场解进行分析。在这里,我们揭示了在蠕变范围内交变磁场的作用下,磁畴壁的演化现象,该现象远远超出了畴壁位置的小波动极限。将磁场脉冲施加到具有垂直各向异性的超薄铁磁膜中,并通过极性磁光克尔效应显微镜对所得的畴壁演化进行表征。弹性接口模型可以很好地预测直流特性,而在交替的方形脉冲的作用下,可以观察到惊人的意外特征:磁光图像显示,经过一定数量的循环后,畴壁随着变形而向强烈扭曲的形状发展域区域。畴壁的形态在可能的情况下以粗糙度指数为特征,并与更适合表征这种瞬态演化的可观测替代物进行对比。讨论了最终的静态收敛以及基础物理学。

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  • 来源
    《Physical review》 |2019年第21期|214401.1-214401.9|共9页
  • 作者单位

    Univ Buenos Aires, FCEyN, Dept Fis, Buenos Aires, DF, Argentina|Univ Buenos Aires, CONICET, IFIBA, Buenos Aires, DF, Argentina;

    Ctr Atom Bariloche, CONICET, CNEA, Inst Nanociencia & Nanotecnol, R8402AGP, San Carlos De Bariloche, Rio Negro, Argentina|Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands;

    Ctr Atom Bariloche, CONICET, CNEA, Inst Nanociencia & Nanotecnol, R8402AGP, San Carlos De Bariloche, Rio Negro, Argentina;

    Univ Paris Saclay, Univ Paris Sud, CNRS, Unite Mixte Phys,Thales, F-91767 Palaiseau, France;

    Univ Paris Saclay, Univ Paris Sud, CNRS, Unite Mixte Phys,Thales, F-91767 Palaiseau, France;

    Ctr Atom Bariloche, CONICET, CNEA, Inst Nanociencia & Nanotecnol, R8402AGP, San Carlos De Bariloche, Rio Negro, Argentina|Univ Nacl Cuyo, CNEA, Inst Balseiro, Av E Bustillo 9500,R8402AGP, S C De Barilohe, Rio Negro, Argentina;

    Ctr Atom Bariloche, CONICET, CNEA, Inst Nanociencia & Nanotecnol, R8402AGP, San Carlos De Bariloche, Rio Negro, Argentina;

    Univ Buenos Aires, FCEyN, Dept Fis, Buenos Aires, DF, Argentina|Univ Buenos Aires, CONICET, IFIBA, Buenos Aires, DF, Argentina;

    Univ Buenos Aires, FCEyN, Dept Fis, Buenos Aires, DF, Argentina|Univ Buenos Aires, CONICET, IFIBA, Buenos Aires, DF, Argentina;

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