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首页> 外文期刊>Physical review >Field-induced dissociation of two-dimensional excitons in transition metal dichalcogenides
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Field-induced dissociation of two-dimensional excitons in transition metal dichalcogenides

机译：过渡金属二卤化物中二维激子的场致离解

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摘要

Generation of photocurrents in semiconducting materials requires dissociation of excitons into free charge carriers. While thermal agitation is sufficient to induce dissociation in most bulk materials, an additional push is required to induce efficient dissociation of the strongly bound excitons in monolayer transition metal dichalcogenides (TMDs). Recently, static in-plane electric fields have proven to be a promising candidate. In the present paper, we introduce a numerical procedure, based on exterior complex scaling, capable of computing field-induced exciton dissociation rates for a wider range of field strengths than previously reported in the literature. We present both Stark shifts and dissociation rates for excitons in various TMDs calculated within the Mott-Wannier model. Here, we find that the field-induced dissociation rate is strongly dependent on the dielectric screening environment. Furthermore, applying weak-field asymptotic theory to the Keldysh potential, we are able to derive an analytical expression for exciton dissociation rates in the weak-field region.
机译：在半导体材料中产生光电流需要将激子解离成自由电荷载体。尽管热搅动足以在大多数块状材料中引起离解，但仍需要额外的推动以诱导单层过渡金属二卤化二异氰酸酯（TMDs）中强结合的激子的有效离解。最近，已证明静态平面电场是有希望的候选者。在本文中，我们介绍了一种基于外部复杂尺度的数值方法，该方法能够计算出比以前文献中报道的更大的场强范围内的场致激子解离速率。我们介绍了在Mott-Wannier模型中计算的各种TMD中激子的斯塔克位移和解离速率。在这里，我们发现场诱导的解离速率在很大程度上取决于介电屏蔽环境。此外，将弱场渐近理论应用于Keldysh势，我们能够导出弱场区域中激子解离速率的解析表达式。

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