Structural and electronic phase transitions driven by electric field in metastable MoS_2 thin flakes

Shang C.; Lei B.; Zhuo W. Z.; Zhang Q.; Zhu C. S.; Cui J. H.; Luo X. G.; Wang N. Z.; Meng F. B.; Ma L. K.; Zeng C. G.; Wu T.; Sun Z.; Huang F. Q.; Chen X. H.

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Structural and electronic phase transitions driven by electric field in metastable MoS_2 thin flakes

机译：电场驱动亚稳MoS_2薄片中的结构和电子相变

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Transition-metal dichalcogenides own a variety of structures as well as electronic properties which can be modulated by structural variations, element substitutions, ion or molecule intercalations, etc. However, there is very limited knowledge on metastable phases of this family, especially the precise regulation of structural changes and accompanied evolution of electronic properties. Here, based on a new developed field-effect transistor with solid ion conductor as the gate dielectric, we report a controllable structural and electronic phase transitions in metastable MoS2 thin flakes driven by electric field. We found that the metastable structure of 1T"'-MoS2 thin flake can be transformed into another metastable structure of 1T'-type upon intercalation of lithium regulated by electric field. Moreover, the metastable 1T' phase persists during the cycle of intercalation and de-intercalation of lithium controlled by electric field, and the electronic properties can be reversibly manipulated with a remarkable change of resistance by four orders of magnitude from the insulating 1T'-LiMoS2 to superconducting 1T'-MoS2. Such reversible and dramatic changes in electronic properties provide intriguing opportunities for development of novel nanodevices with highly tunable characteristics under electric field.

机译：过渡金属二卤化物具有多种结构以及可通过结构变化，元素取代，离子或分子插入等调节的电子性质。但是，关于该族的亚稳相的知识非常有限，尤其是精确的调控结构变化以及伴随着电子特性的演变。在此，基于一种新开发的以固体离子导体作为栅极电介质的场效应晶体管，我们报道了在电场驱动下的亚稳MoS2薄片中可控的结构和电子相变。我们发现，在电场调节的锂嵌入作用下，1T ''-MoS2薄片的亚稳结构可以转变为另一种1T'型亚稳结构，而且在嵌入和循环过程中亚稳1T'相持续存在。从绝缘的1T'-LiMoS2到超导的1T'-MoS2，电阻的显着变化可通过四个数量级的显着变化而可逆地控制，从而可逆地操纵锂的电子性质。特性为在电场下开发具有高度可调特性的新型纳米器件提供了有趣的机会。

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《Physical review》 |2019年第2期|020508.1-020508.6|共6页
作者
Shang C.; Lei B.; Zhuo W. Z.; Zhang Q.; Zhu C. S.; Cui J. H.; Luo X. G.; Wang N. Z.; Meng F. B.; Ma L. K.; Zeng C. G.; Wu T.; Sun Z.; Huang F. Q.; Chen X. H.;
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Univ Sci & Technol China, Key Lab Strongly Coupled Quantum Matter Phys, Chinese Acad Sci, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China;

Univ Sci & Technol China, Key Lab Strongly Coupled Quantum Matter Phys, Chinese Acad Sci, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China;

Univ Sci & Technol China, Key Lab Strongly Coupled Quantum Matter Phys, Chinese Acad Sci, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China;

Univ Sci & Technol China, Key Lab Strongly Coupled Quantum Matter Phys, Chinese Acad Sci, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China;

Univ Sci & Technol China, Key Lab Strongly Coupled Quantum Matter Phys, Chinese Acad Sci, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China;

Univ Sci & Technol China, Key Lab Strongly Coupled Quantum Matter Phys, Chinese Acad Sci, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China;

Univ Sci & Technol China, Key Lab Strongly Coupled Quantum Matter Phys, Chinese Acad Sci, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China;

Univ Sci & Technol China, Key Lab Strongly Coupled Quantum Matter Phys, Chinese Acad Sci, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China;

Univ Sci & Technol China, Key Lab Strongly Coupled Quantum Matter Phys, Chinese Acad Sci, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China;

Univ Sci & Technol China, Key Lab Strongly Coupled Quantum Matter Phys, Chinese Acad Sci, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China;

Univ Sci & Technol China, Key Lab Strongly Coupled Quantum Matter Phys, Chinese Acad Sci, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China;

Univ Sci & Technol China, Key Lab Strongly Coupled Quantum Matter Phys, Chinese Acad Sci, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China|CAS Ctr Excellence Superconducting Elect CENSE, Shanghai 200050, Peoples R China;

CAS Ctr Excellence Superconducting Elect CENSE, Shanghai 200050, Peoples R China|Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China;

CAS Ctr Excellence Superconducting Elect CENSE, Shanghai 200050, Peoples R China|Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China|Peking Univ, Coll Chem & Mol Engn, State Key Lab Rare Earth Mat Chem & Applicat, Beijing 100871, Peoples R China;

Univ Sci & Technol China, Key Lab Strongly Coupled Quantum Matter Phys, Chinese Acad Sci, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China|CAS Ctr Excellence Quantum Informat & Quantum Phy, Hefei 230026, Anhui, Peoples R China|Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China;

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1. Structural and electronic phase transitions driven by electric field in metastable MoS_2 thin flakes [J] . Shang C., Lei B., Zhuo W. Z., Physical review . 2019,第2期

机译：由电场驱动的结构和电子阶段过渡在亚稳态MOS_2薄片中驱动
2. Structural and electronic phase transitions driven by electric field in metastable MoS2 thin flakes [J] . Shang C., Lei B., Zhuo W. Z., Physical review, B . 2019,第2期

机译：由电场在亚稳态MOS2薄薄片中驱动的结构和电子阶段过渡
3. Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric [J] . B. Lei, N. Z. Wang, C. Shang, Physical review. B, Condensed Matter And Materals Physics . 2017,第2期

机译：通过使用固体离子导体作为栅极电介质的场效应晶体管来调节FeSe薄片中的相变
4. Field-induced Phase Transition and Metastable Ferroelectric Phase in Antiferroelectric Creamics of (Pb,La)(Zr,Sn,Ti)O{sub}3 [C] . T. Q. Yang, X. Yao IEEE International Symposium on the Applications of Ferroelectrics . 2007

机译：（PB，LA）（Zr，Sn，Ti）O {Sub} 3中的现场诱导的相变和亚稳铁电相
5. Electric Field-Induced Phase Transitions in Ferroelectrics at Polymorphic Phase Boundaries [D] . Iamsasri, Thanakorn. 2016

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6. Topological quantum phase transitions driven by external electric fields in Sb2Te3 thin films [O] . Minsung Kim, Choong H. Kim, Heung-Sik Kim, 2012

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7. Tuning phase transitions of FeSe thin flakes by field effect transistor with solid ion conductor as gate dielectric [O] . Lei, B., Wang, N. Z., Shang, C., 2016

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Structural and electronic phase transitions driven by electric field in metastable MoS_2 thin flakes

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