...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Physical review >Two-dimensional Weyl half-semimetal and tunable quantum anomalous Hall effect
【24h】

Two-dimensional Weyl half-semimetal and tunable quantum anomalous Hall effect

机译：二维Weyl半半金属和可调谐量子异常霍尔效应

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Topological states of matter and two-dimensional (2D) magnetism are two fascinating topics attracting tremendous interest in current research. In this work, we explore their interplay in a single 2D material system by proposing a different topological quantum state of matter-the 2D Weyl half-semimetal (WHS), which features 2D Weyl points at the Fermi level belonging to a single spin channel, such that the low-energy electrons are described by fully spin polarized 2D Weyl fermions. We provide the condition to realize this state, which requires an in-plane magnetization and a preserved vertical mirror symmetry. Remarkably, we prove that the WHS state is a critical state sitting at the topological phase transition between two quantum anomalous Hall (QAH) insulator phases with opposite Chern numbers, such that a switching of the QAH states as well as the direction of chiral edge channels can be readily achieved by rotating the magnetization direction. Furthermore, we predict a concrete 2D material, monolayer PtCl3, as a candidate for realizing the 2D WHS state and the above intriguing effects. Our findings open up a new direction of research at the confluent point of topology and magnetism in two dimensions, and the revealed route towards switchable QAH phases will enable new designs of topological nanoelectronic devices.
机译：物质的拓扑状态和二维（2D）磁性是两个引人入胜的主题，引起了当前研究的极大兴趣。在这项工作中，我们通过提出物质的不同拓扑量子态-2D Weyl半半金属（WHS），探索它们在单个2D材料系统中的相互作用，该特征在费米能级上具有2D Weyl点，属于单个自旋通道，因此，低能电子通过完全自旋极化的二维Weyl费米子来描述。我们提供了实现此状态的条件，这需要平面内磁化和保持垂直镜面对称性。值得注意的是，我们证明了WHS状态是临界状态，它处于具有相反Chern数的两个量子异常霍尔（QAH）绝缘子相之间的拓扑相变中，因此QAH状态的切换以及手性边缘通道的方向通过旋转磁化方向可以容易地实现。此外，我们预测了一种具体的2D材料，即单层PtCl3，可以实现2D WHS状态和上述有趣的效果。我们的发现为二维和拓扑学与磁性的融合点开辟了新的研究方向，而通往可切换QAH相的揭示路线将使拓扑纳米电子器件的新设计成为可能。

著录项

  • 来源
    《Physical review》 |2019年第6期|64408.1-64408.7|共7页
  • 作者

    You Jing-Yang; Chen Cong; Zhang Zhen; Sheng Xian-Lei; Yang Shengyuan A.; Su Gang;

  • 作者单位

    Univ Chinese Acad Sci Sch Phys Sci Beijing 100049 Peoples R China;

    Beihang Univ Minist Educ Key Lab Micronano Measurement Manipulat & Phys Dept Phys Beijing 100191 Peoples R China|Singapore Univ Technol & Design Res Lab Quantum Mat Singapore 487372 Singapore;

    Singapore Univ Technol & Design Res Lab Quantum Mat Singapore 487372 Singapore|Nanjing Normal Univ Ctr Quantum Transport & Thermal Energy Sci Sch Phys & Technol Nanjing 210023 Jiangsu Peoples R China;

    Univ Chinese Acad Sci Sch Phys Sci Beijing 100049 Peoples R China|Univ Chinese Acad Sci Kavli Inst Theoret Sci Beijing 100190 Peoples R China|Univ Chinese Acad Sci CAS Ctr Excellence Topol Quantum Computat Beijing 100190 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号