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Infrared ultrafast spectroscopy of solution-grown thin film tellurium

机译：溶液生长薄膜碲的红外超快光谱

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摘要

Several materials studied intensively in their bulk forms several decades ago have re-emerged in recent years in their thin film and monolayer manifestations. Tellurium, like black phosphorus, is one such elemental two-dimensional material with promising semiconducting properties for electronic and optoelectronic applications. To study fundamental carrier properties such as hot carrier relaxation and recombination, we performed ultrafast femtosecond pump-probe spectroscopy on thin flakes of solution-grown tellurium. To access the low band gap of tellurium, we used infrared, near-band-gap and below-band-gap probes to monitor the relaxation processes. Sweeping the probing wavelengths across the band gap helps to shed light on the anisotropic band structure of the material. We find that relaxation in flakes of 60-160 nm thickness is on the order of 100 s of picoseconds. Thinner flakes (10-20 nm), on the other hand, exhibit fast relaxation times of sub-20 ps. Radiative recombination is identified as the relaxation mechanism in thick flakes, whereas midgap trap states arising from surface defects and impurities are responsible for the fast relaxation in thin flakes. A diffusion-recombination model accounting for the surface defect and radiative recombinations explains the experimental data well.
机译：几十年前，大量研究了其本体形式的材料，近年来又以薄膜和单层形式重新出现。碲与黑磷一样，是一种此类元素二维材料，具有用于电子和光电应用的有希望的半导体性能。为了研究基本的载流子特性，例如热载流子弛豫和复合，我们对溶液生长的碲薄片进行了超快速飞秒泵浦-探针光谱分析。要访问碲的低带隙，我们使用了红外，近带隙和带下隙探针来监测弛豫过程。在带隙上扫掠探测波长有助于将光散布在材料的各向异性带结构上。我们发现，厚度为60-160 nm的薄片中的弛豫约为100皮秒。另一方面，较薄的薄片（10-20 nm）显示出低于20 ps的快速弛豫时间。辐射重组被认为是厚薄片中的弛豫机制，而由表面缺陷和杂质引起的中间能隙陷阱状态是薄薄片中快速弛豫的原因。考虑表面缺陷和辐射复合的扩散复合模型很好地解释了实验数据。

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  • 来源
    《Physical review》 |2019年第7期|075436.1-075436.6|共6页
  • 作者

    Iyer Vasudevan; Segovia Mauricio; Wang Yixiu; Wu Wenzhuo; Ye Peide; Xu Xianfan;

  • 作者单位

    Purdue Univ Sch Mech Engn W Lafayette IN 47907 USA|Purdue Univ Birck Nanotechnol Ctr W Lafayette IN 47907 USA;

    Purdue Univ Sch Ind Engn W Lafayette IN 47907 USA;

    Purdue Univ Birck Nanotechnol Ctr W Lafayette IN 47907 USA|Purdue Univ Sch Elect Engn W Lafayette IN 47907 USA;

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