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首页> 外文期刊>Physical review. B, Condensed Matter And Materals Physics >Voltage-controlled magnetic anisotropy and voltage-induced Dzyaloshinskii-Moriya interaction change at the epitaxial Fe(001)/MgO(001) interface engineered by Co and Pd atomic-layer insertion
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Voltage-controlled magnetic anisotropy and voltage-induced Dzyaloshinskii-Moriya interaction change at the epitaxial Fe(001)/MgO(001) interface engineered by Co and Pd atomic-layer insertion

机译：Co和Pd原子层插入设计的外延Fe（001）/ MgO（001）界面处的压控磁各向异性和压敏Dzyaloshinskii-Moriya相互作用

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摘要

We fabricated epitaxial multilayers with Co and Pd atomic-layer insertion at Fe(001)/MgO(001) interface and systematically investigated voltage-controlled magnetic anisotropy (VCMA) and voltage-induced interfacial Dzyaloshinskii-Moriya interaction (iDMI) change. The VCMA and iDMI change was characterized by spinwave spectroscopy. We found that the VCMA was increased by Co and Pd insertions to -180 fJ/Vm in the Fe/Co/Pd/MgO system. We also found a large voltage-induced iDMI change of 65 fJ/Vm. The postannealing dependence of the VCMA and iDMI change was also characterized to investigate the influence of the change in chemical ordering around the MgO interface.
机译：我们制造了在Fe（001）/ MgO（001）界面上插入Co和Pd原子层的外延多层膜，并系统地研究了电压控制的磁各向异性（VCMA）和电压引起的界面Dzyaloshinskii-Moriya相互作用（iDMI）的变化。 VCMA和iDMI的变化通过自旋波谱进行了表征。我们发现，在Fe / Co / Pd / MgO系统中，Co和Pd插入使VCMA增加到-180 fJ / Vm。我们还发现电压引起的iDMI大变化为65 fJ / Vm。还对VCMA和iDMI变化的退火后依赖性进行了表征，以研究MgO界面周围化学有序变化的影响。

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