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Origin of planar Hall effect on the surface of topological insulators: Tilt of Dirac cone by an in-plane magnetic field

机译:拓扑绝缘体表面上的平面霍尔效应的起源:面内磁场对狄拉克锥的倾斜

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摘要

Recently, a novel planar Hall effect (PHE), which results from the resistivity anisotropy induced by an in-plane magnetic field, was discovered on the surface of topological insulators (TIs). While the PHE phenomenon in Weyl/Dirac semimetals is understood as a consequence of the chiral anomaly, the origin of the PHE in TIs, however, remains unclear theoretically. Several theories and experiments have ascribed the appearance of the PHE to the anisotropic backscattering induced by magnetic disorders, where the magnetization of the scatterers is indispensable. Instead, we here show that the anisotropic backscattering can arise from the tilt of the Dirac cone by an in-plane magnetic field, which emerges if nonlinear momentum terms are included, irrelevant to the magnetic nature of the scatterers. We further find that a relatively strong scalar potential can further enhance the PHE magnitude significantly, and the resulting impurity resonant state together with the tilted cone can produce the double-peak structure of the PHE and the sign change of the anisotropic magnetoresistivity. Our theory provides another perspective to understand the nontopological origin of the experimentally observed PHE in topological materials.
机译:最近,在拓扑绝缘体(TI)的表面上发现了一种新的平面霍尔效应(PHE),该效应是由平面内磁场引起的电阻率各向异性引起的。尽管Weyl / Dirac半金属中的PHE现象被理解为是手性异常的结果,但是,TI中PHE的起源在理论上仍然不清楚。几种理论和实验已将PHE的出现归因于由磁性紊乱引起的各向异性反向散射,其中散射体的磁化是必不可少的。取而代之的是,我们在这里表明各向异性背向散射可能是由Dirac锥的面内磁场引起的,如果包含非线性动量项,则该面内磁场就会出现,而与散射体的磁性无关。我们进一步发现,相对强的标量电势可以进一步显着提高PHE的幅度,并且所产生的杂质共振态与倾斜的圆锥体一起可以产生PHE的双峰结构和各向异性磁阻的符号变化。我们的理论为理解拓扑材料中实验观察到的PHE的非拓扑起源提供了另一个视角。

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  • 来源
    《Physical review》 |2020年第4期|041408.1-041408.6|共6页
  • 作者单位

    Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials SPTE South China Normal University Guangzhou 510006 China College of Automation Zhongkai University of Agriculture and Engineering Guangzhou 510225 China;

    Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials SPTE South China Normal University Guangzhou 510006 China;

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