Corundum insulating phases in highly Ti-doped V_2O_3 nanocrystals

Yoichi Ishiwata; Tom Maruyama; Sho Otsuru; Takuto Tsukahara; Hirofumi Ishii; Yen-Fa Liao; Ku-Ding Tsuei; Masaki Imamura; Kazutoshi Takahashi; Yuji Inagaki; Tatsuya Kawae; Tetsuya Kida; Satoshi Suehiro; Masashi Nantoh; Koji Ishibashi

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Corundum insulating phases in highly Ti-doped V_2O_3 nanocrystals

机译：高Ti掺杂V_2O_3纳米晶体中的刚玉绝缘相

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Doping V_2O_3 with Ti stabilizes the corundum paramagnetic metallic phase and restricts the transition to the monoclinic antiferromagnetic insulating phase at lower temperatures. In this study, we investigated the dependence of phase stability on Ti concentration for V_2O_3 nanocrystals as small as 20 nm. Ti doping of several percent induces a high-temperature insulating phase preserving the magnetic transition without the crystal symmetry change. The emergence of the insulating phases, which are peculiar to this crystal size, can be attributed to the enhancement of the on-site Coulomb interaction U and increased mixing between α_(1g) and e_g~π states accompanied by characteristic lattice parameter changes in the high Ti doping region.

机译：用Ti掺杂V_2O_3可稳定刚玉的顺磁性金属相，并在较低温度下限制向单斜反铁磁性绝缘相的过渡。在这项研究中，我们研究了V_2O_3纳米晶体（小至20 nm）的相稳定性对Ti浓度的依赖性。百分之几的Ti掺杂会诱导高温绝缘相，从而在不改变晶体对称性的情况下保持磁过渡。绝缘相的出现是该晶体尺寸所特有的，这可以归因于现场库仑相互作用U的增强以及α_（1g）和e_g〜π状态之间的混合增加，以及晶格中特征晶格参数的变化。高钛掺杂区。

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《Physical review》 |2020年第3期|035415.1-035415.7|共7页
作者
Yoichi Ishiwata; Tom Maruyama; Sho Otsuru; Takuto Tsukahara; Hirofumi Ishii; Yen-Fa Liao; Ku-Ding Tsuei; Masaki Imamura; Kazutoshi Takahashi; Yuji Inagaki; Tatsuya Kawae; Tetsuya Kida; Satoshi Suehiro; Masashi Nantoh; Koji Ishibashi;
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Department of Physics Saga University Saga 840-8502 Japan;

National Synchrotron Radiation Research Center Hsinchu 30076 Taiwan;

Synchrotron Light Application Center Saga University Saga 840-8502 Japan;

Department of Applied Quantum Physics Kyushu University Fukuoka 819-0395 Japan;

Department of Applied Chemistry and Biochemistry Kumamoto University Kumamoto 860-8555. Japan;

Materials Research and Development Laboratory Japan Fine Ceramic Center (JFCC) Nagoya 456-8587 Japan;

Advanced Device Laboratory The Institute of Physical and Chemical Research (RIKEN) Wako 351-0198 Japan;

Advanced Device Laboratory The Institute of Physical and Chemical Research (RIKEN) Wako 351-0198 Japan CEMS RIKEN Wako 351-0198 Japan;

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1. Corundum insulating phases in highly Ti-doped V2O3 nanocrystals [J] . Physical review, B . 2020,第3期

机译：高度掺杂V2O3纳米晶体中的刚玉绝缘相
2. Thermal Oxidation of V_2O_3 Nanocrystals: A Template Method for the Fabrication of Monoclinic Phase VO_2 Nanocrystals [J] . D. B. Li, M. Li, J. Pan, Journal of nanoscience and nanotechnology . 2013,第8期

机译：V_2O_3纳米晶体的热氧化：单斜相VO_2纳米晶体制备的模板方法。
3. Calculation of metallic and insulating phases of V_2O_3 by hybrid density functionals [J] . Yuzheng Guo, Stewart J. Clark, John Robertson The Journal of Chemical Physics . 2014,第5期

机译：用混合密度泛函计算V_2O_3的金属相和绝缘相。
4. Rapid Preparation of V_2O_3 and VN Nanocrystals by Ammonolysis of the Precursor VOC_2O_4·H_2O [C] . H. Lin, B. W. Tao, Q. Li, International Conference on Manufacturing Science and Engineering . 2011

机译：通过酰上的前体VOC_2O_4·H_2O通过氨解酰基酰纳米晶体的快速制备V_2O_3和VN纳米晶
5. The Role of Recoverable and Non-Recoverable Defects in DC Electrical Aging of Highly Disordered Insulating Materials [D] . Andersen, Allen. 2018

机译：可恢复和不可恢复缺陷在高度无序绝缘材料的直流电老化中的作用
6. Postsynthesis Transformation of Insulating Cs4PbBr6 Nanocrystals into Bright Perovskite CsPbBr3 throughPhysical and Chemical Extraction of CsBr [O] . Francisco Palazon, Carmine Urso, Luca De Trizio, -1

机译：绝缘的Cs4PbBr6纳米晶体通过合成后转化为明亮的钙钛矿CsPbBr3溴化铯的理化提取
7. Magnetic correlations and quantum criticality in the insulating antiferromagnetic, insulating spin liquid, renormalized Fermi liquid, and metallic antiferromagnetic phases of the Mott system V_2O_3 [O] . Bao Wei, Broholm C., Aeppli G., 1998

机译：Mott系统V_2O_3的绝缘反铁磁，绝缘自旋液体，重正化费米液体和金属反铁磁相中的磁相关性和量子临界性
8. STRESS IN SILICON FILMS DEPOSITED HETEROEPITAXIALLY ON INSULATING SUBSTRATES WITH PARTICULAR REFERENCE TO CORUNDUM [R] . D. M. Jefkins 1969

机译：在绝缘基板上沉积的硅膜中的应力特别是对CORUNDUm的参考

Corundum insulating phases in highly Ti-doped V_2O_3 nanocrystals

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