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Tuning single-electron charging and interactions between compressible Landau level islands in graphene

机译:调节石墨烯中可压缩的Landau能级岛之间的单电子电荷和相互作用

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Interacting and tunable quantum dots (QDs) have been extensively exploited in condensed matter physics and quantum information science. Using a low-temperature scanning tunneling microscope (STM), we both create and directly image a new type of coupled QD system in graphene, a highly interacting quantum relativistic system with tunable density. Using detailed scanning tunneling spectroscopy (STS) measurements, we show that Landau quantization inside a potential well enables novel electron confinement via the incompressible strips between partially filled Landau levels (LLs), forming isolated and concentric LL QDs. By changing the charge density and the magnetic field we can tune continuously between single- and double-concentric LL QD systems within the same potential well. In the concentric QD regime, single-electron charging peaks of the two dots intersect, displaying a characteristic avoidance pattern. At moderate fields, we observe an unconventional avoidance pattern that differs significantly from that observed in capacitively coupled double-QD systems. We find that we can reproduce in detail this anomalous avoidance pattern within the framework of the electrostatic double-QD model by replacing the capacitive interdot coupling with a phenomenological charge-counting system in which charges in the inner concentric dot are counted in the total charge of both islands. The emergence of such strange forms of interdot coupling in a single potential well, together with the ease of producing such charge pockets in graphene and other two-dimensional (2D) materials, reveals an intriguing testbed for the confinement of 2D electrons in customizable potentials.
机译:相互作用和可调量子点(QD)在凝聚态物理和量子信息科学中得到了广泛的利用。我们使用低温扫描隧道显微镜(STM),在石墨烯中创建了一种新型耦合QD系统并对其进行了直接成像,石墨烯是一种具有可调密度的高度相互作用的量子相对论系统。使用详细的扫描隧道光谱(STS)测量,我们显示势阱内部的Landau量化能够通过部分填充的Landau能级(LLs)之间的不可压缩条带实现新型电子限制,从而形成孤立的同心LL QD。通过更改电荷密度和磁场,我们可以在同一势阱内的单同心和双同心LL QD系统之间进行连续调谐。在同心QD方案中,两个点的单电子充电峰相交,显示出特征回避模式。在中等磁场下,我们观察到一种非常规规避模式,该模式与在电容耦合双QD系统中观察到的显着不同。我们发现,我们可以通过用现象学的电荷计数系统代替电容性的点间耦合,在静电双QD模型的框架内详细地再现这种异常避免模式,其中内部同心点中的电荷计入总电荷。两个岛屿。单个势阱中这种奇怪形式的点间耦合的出现,以及在石墨烯和其他二维(2D)材料中易于产生这样的电荷袋的现象,揭示了将二维电子限制在可自定义电位中的有趣试验台。

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