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Anisotropy of the in-plane g-factor of electrons in HgTe quantum wells

机译：HgTe量子阱中电子的面内g因子的各向异性

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摘要

The results of experimental studies of the Shubnikov-de Haas (SdH) effect in the (013)-HgTe/Hg_(1-x)Cd_x Te quantum wells (QWs) of electron type of conductivity both with normal and inverted energy spectrum are reported. Comprehensive analysis of the SdH oscillations measured for the different orientations of magnetic field relative to the quantum well plane and crystallographic exes allows us to investigate the anisotropy of the Zeeman effect. For the QWs with inverted spectrum, it has been shown that the ratio of the spin splitting to the orbital one is strongly dependent not only on the orientation of the magnetic field relative to the QW plane but also on the orientation of the in-plane magnetic field component relative to crystallographic axes laying in the QW plane that implies the strong anisotropy of in-plane g-factor. In the QW with normal spectrum, this ratio strongly depends on the angle between the magnetic field and the normal to the QW plane and reveals a very slight anisotropy in the QW plane. To interpret the data, the Landau levels in the tilted magnetic field are calculated within the framework of four-band kP model. It is shown that the experimental results can be quantitatively described only with taking into account the interface inversion asymmetry.
机译：报告了在（013）-HgTe / Hg_（1-x）Cd_x Te量子阱（QWs）的电子类型的电导率均具有正态和反向能谱的Shubnikov-de Haas（SdH）效应的实验研究结果。对相对于量子阱平面和晶体学实例的不同磁场方向测量的SdH振荡的综合分析，使我们能够研究塞曼效应的各向异性。对于具有倒频谱的QW，已经表明，自旋分裂与轨道之一的比不仅强烈取决于磁场相对于QW平面的方向，而且还取决于平面内磁场的方向。相对于放置在QW平面上的晶体学轴的磁场分量，这意味着平面内g因子具有很强的各向异性。在具有正谱的QW中，该比率很大程度上取决于磁场与QW平面法线之间的角度，并且在QW平面中显示出非常小的各向异性。为了解释数据，在四波段kP模型的框架内计算了倾斜磁场中的Landau能级。结果表明，仅考虑界面反转不对称性，才能定量描述实验结果。

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  • 来源
    《Physical review》 |2020年第8期|085305.1-085305.9|共9页
  • 作者

    G. M. Minkov; V. Ya. Aleshkin; O. E. Rut; A. A. Sherstobitov; S. A. Dvoretski; N. N. Mikhailov; A. V. Germanenko;

  • 作者单位

    School of Natural Sciences and Mathematics Ural Federal University 620002 Ekaterinburg Russia M. N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences 620137 Ekaterinburg Russia;

    Institute for Physics of Microstructures RAS 603087 Nizhnv Novgorod Russia Lobachevsky University of Nizhnv Novgorod 603950 Nizhny Novgorod Russia;

    School of Natural Sciences and Mathematics Ural Federal University 620002 Ekaterinburg Russia;

    Institute of Semiconductor Physics RAS 630090 Novosibirsk Russia;

    Institute of Semiconductor Physics RAS 630090 Novosibirsk Russia Department of Phvsics Novosibirsk State University Novosibirsk 630090 Russia;

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