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Josephson junctions of Weyl and multi-Weyl semimetals

机译:Weyl和多Weyl半金属的约瑟夫森结

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摘要

We study a Josephson junction involving a Weyl and a multi-Weyl semimetal separated by a barrier region of width d created by putting a gate voltage U_0 over the Weyl semimetal. The topological winding number of such a junction changes across the barrier. We show that I_cR_N for such junctions, where I_c is the critical current and R_N the normal-state resistance, in the thin-barrier limit, has a universal value independent of the barrier potential. We provide an analytical expression of the Andreev bound states and use it to demonstrate that the universal value of I_cR_N is a consequence of change in topological winding number across the junction. We also study the AC Josephson effect in such a junction in the presence of an external microwave radiation, chart out its current-voltage characteristics, and show that the change in the winding number across the junction shapes the properties of its Shapiro steps. We discuss the effect of increasing barrier thickness d on the above-mentioned properties and chart-out experiments which may test our theory.
机译:我们研究了一个约瑟夫森结,该结涉及一个Weyl和一个多Weyl半金属,被一个宽度为d的势垒区域分隔开,该势垒区域是通过在Weyl半金属上施加栅极电压U_0来创建的。这种结的拓扑绕组数在势垒范围内变化。我们表明,对于此类结,I_cR_N在薄壁垒范围内为临界电流,而R_N为正常状态电阻,在薄壁垒范围内,其通用值与势垒电势无关。我们提供了Andreev束缚态的分析表达式,并使用它来证明I_cR_N的通用值是结点上拓扑绕组数变化的结果。我们还研究了存在外部微波辐射的此类结中的交流约瑟夫森效应,绘制了其电流-电压特性图,并表明跨结的绕组数变化会影响其Shapiro步骤的特性。我们讨论了增加阻挡层厚度d对上述特性的影响,并讨论了可以验证我们理论的实验。

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  • 来源
    《Physical review》 |2020年第7期|075110.1-075110.10|共10页
  • 作者单位

    BLTP Joint Institute for Nuclear Research Dubna Moscow Region 141980 Russia;

    Center for Theoretical Studies Indian Institute of Technology Kharagpur 721302 India;

    BLTP Joint Institute for Nuclear Research Dubna Moscow Region 141980 Russia Department of Nanotechnology and New Materials Dubna State University Dubna Moscow Region 141980 Russia;

    School of Physical Sciences Indian Association for the Cultivation of Science Jadavpur Kolkata 700032 India;

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