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BaHgSn: A Dirac semimetal with surface hourglass fermions

机译：BaHgSn：带有表面沙漏费米子的狄拉克半金属

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摘要

We proposed that BaHgSn is a Dirac semimetal (DSM) which can host hourglasslike surface states (HSSs) as protected by nonsymmorphic glide symmetry. Compared to KHgSb, an isostructural topological crystalline insulator with the same HSSs, BaHgSn has an additional band inversion at the Γ point. This band inversion is induced by the stronger interlayer coupling among Hg-Sn honeycomb layers than that among Hg-Sb layers in KHgSb, which leads to bulk Dirac nodes in BaHgSn along the layer stacking direction Γ-A. In addition, the mirror Chern number C_i protected by the mirror plane M_z (k_z = 0) changes from 2 in KHgSb to 3 in BaHgSn. Therefore, when a compressive uniaxial strain is applied along the v axis to break the rotation symmetry protecting the DSM state, BaHgSn becomes a strong topological insulator with Z_2 indices of (1;000) and the topological surface Dirac cone coexists with HSSs on the (010) surface. The Wilson-loop spectra have been calculated to verify these topological features. The calculated surface states, the Fermi surfaces and their quasiparticle interference patterns are ready to be compared with experimental measurements.
机译：我们提出，BaHgSn是一种狄拉克半金属（DSM），可以承载沙漏状的表面态（HSS），受到非对称滑移对称性的保护。与具有相同HSS的同构拓扑晶体绝缘体KHgSb相比，BaHgSn在Γ点具有附加的能带反转。该带反转是由Hg-Sn蜂窝层之间的层间耦合比KHgSb中的Hg-Sb层之间的层间耦合更强引起的，这导致BaHgSn中沿着层堆叠方向Γ-A的体狄拉克结。另外，由镜平面M_z（k_z ＝ 0）保护的镜Chern数C_i从KHgSb中的2变为BaHgSn中的3。因此，当沿v轴施加压缩单轴应变以破坏保护DSM状态的旋转对称性时，BaHgSn成为Z_2指数为（1; 000）的强拓扑绝缘体，并且拓扑表面Dirac锥与（ 010）表面。已计算出威尔逊环谱以验证这些拓扑特征。可以将计算出的表面状态，费米表面及其准粒子干涉图样与实验测量结果进行比较。

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  • 来源
    《Physical review》 |2020年第11期|115145.1-115145.7|共7页
  • 作者

    Tan Zhang; Zhihai Cui; Zhijun Wang; Hongming Weng; Zhong Fang;

  • 作者单位

    Beijing National Research Center for Condensed Matter Physics and Institute of Physics Chinese Academy of Sciences Beijing 100190 China School of Physical Sciences University of Chinese Academy of Sciences Beijing 100049 China;

    Beijing National Research Center for Condensed Matter Physics and Institute of Physics Chinese Academy of Sciences Beijing 100190 China School of Physical Sciences University of Chinese Academy of Sciences Beijing 100049 China Songshan Lake Materials Laboratory Dongguan Guangdong 523808 China CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of Sciences Beijing 100190 China;

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