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Gauge-phonon dominated resistivity in twisted bilayer graphene near magic angle

机译：Gauge-Phonon扭曲双层石墨烯的电阻率在魔法角度附近

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摘要

Recent experiments on twisted bilayer graphene (tBG) close to magic angle show that a small relative rotation in a van der Waals heterostructure greatly alters its electronic properties. We consider various scattering mechanisms and show that the carrier transport in tBG is dominated by a combination of charged impurities and acoustic gauge phonons. Charged impurities still dominate at low temperature and densities because of the inability of Dirac fermions to screen long-range Coulomb potentials at charge neutrality; however, the gauge phonons dominate for most of the experimental regime because, although they couple to current, they do not induce charge and are therefore unscreened by the large density of states close to magic angle. We show that the resistivity has a strong monotonically decreasing carrier density dependence at low temperature due to charged impurity scattering, and weak density dependence at high temperature due to gauge phonons. Away from charge neutrality, the resistivity increases with temperature, while it does the opposite close to the Dirac point. A nonmonotonic temperature dependence observed only at low temperature and carrier density is a signature of our theory that can be tested in experimentally available samples.
机译：最近关于扭曲的双层石墨烯（TBG）的实验接近魔法角度，表明van der WaAss异质结构中的小相对旋转大大改变了其电子性质。我们考虑各种散射机制，并表明TBG中的载流子通过带电杂质和声学计声子的组合来支配。由于Dirac Fermions无法在电荷中立的屏幕远程库仑电位筛选的情况下，带电杂质在低温和密度下占主导地位;然而，衡量计声子占据了大多数实验性制度的主导地位，因为它们耦合到当前时，它们不会引起电荷，因此通过靠近魔法角度的状态的大密度来忽略。我们表明，由于带电的杂质散射，电阻率在低温下具有强烈的单调性地减小载流子密度依赖性，并且由于规格声子，在高温下弱密度依赖性。远离电荷中性，电阻率随温度的增加，而它与DIRAC点相反。仅在低温和载体密度下观察到非单调的温度依赖性是我们在实验可用样品中测试的理论的签名。

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  • 来源
    《Physical review》 |2019年第14期|140302.1-140302.5|共5页
  • 作者

    Yudhistira Indra; Chakraborty Nilotpal; Sharma Girish; Ho Derek Y. H.; Laksono Evan; Sushkov Oleg P.; Vignale Giovanni; Adam Shaffique;

  • 作者单位

    Natl Univ Singapore Ctr Adv 2D Mat 6 Sci Dr 2 Singapore 117546 Singapore|Natl Univ Singapore Dept Phys 2 Sci Dr 3 Singapore 117551 Singapore;

    Yale NUS Coll 16 Coll Ave West Singapore 138527 Singapore;

    Natl Univ Singapore Ctr Adv 2D Mat 6 Sci Dr 2 Singapore 117546 Singapore|Natl Univ Singapore Dept Phys 2 Sci Dr 3 Singapore 117551 Singapore;

    Natl Univ Singapore Ctr Adv 2D Mat 6 Sci Dr 2 Singapore 117546 Singapore|Yale NUS Coll 16 Coll Ave West Singapore 138527 Singapore;

    Natl Univ Singapore Ctr Adv 2D Mat 6 Sci Dr 2 Singapore 117546 Singapore;

    Univ New South Wales Sch Phys Sydney NSW 2052 Australia;

    Natl Univ Singapore Ctr Adv 2D Mat 6 Sci Dr 2 Singapore 117546 Singapore|Yale NUS Coll 16 Coll Ave West Singapore 138527 Singapore|Univ Missouri Dept Phys & Astron Columbia MO 65211 USA;

    Natl Univ Singapore Ctr Adv 2D Mat 6 Sci Dr 2 Singapore 117546 Singapore|Natl Univ Singapore Dept Phys 2 Sci Dr 3 Singapore 117551 Singapore|Yale NUS Coll 16 Coll Ave West Singapore 138527 Singapore;

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