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Domain-wall motion induced by spin transfer torque delivered by helicity-dependent femtosecond laser

机译:由螺旋转移扭矩引起的域壁运动,由螺旋依赖性飞秒激光输送

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摘要

In magnetic wires with perpendicular anisotropy, moving a domain wall with only current or only circularly polarized light requires a high power. Here, we propose to reduce it by using both short current pulses and femtosecond laser pulses simultaneously. The wires were made out of perpendicularly magnetized film of Pt/Co/Ni/Co/Pt. The displacement of the domain wall is found to be dependent on the laser helicity. Based on a quantitative analysis of the current-induced domain-wall motion, the spin-orbit torque contribution can be neglected when compared to the spin transfer torque contribution. The effective field of the spin transfer torque is extracted from the pulsed field domain-wall measurements. Finally, our result can be described using the Fatuzzo-Labrune model and considering the effective field due to the polarized laser beam, the effective field due to spin transfer torque, and the Gaussian temperature distribution of the laser spot.
机译:在具有垂直各向异性的磁线中,仅具有电流或仅圆极化光的畴壁需要高功率。在这里,我们建议通过同时使用短电流脉冲和飞秒激光脉冲来减少它。电线由Pt / Co / Ni / Co / Pt的垂直磁化薄膜制成。发现畴壁的位移依赖于激光螺旋。基于对电流诱导的畴壁运动的定量分析,与旋转转移扭矩贡献相比,可以忽略旋转轨道扭矩贡献。从脉冲场域壁测量中提取自旋转移扭矩的有效领域。最后,我们的结果可以使用Fatuzzo-Labrune模型描述,并考虑由于偏振激光束引起的有效场,由于旋转转移扭矩和激光斑的高斯温度分布。

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  • 来源
    《Physical review》 |2019年第14期|144402.1-144402.6|共6页
  • 作者单位

    Beihang Univ Sch Microelect Fert Beijing Inst BDBC Beijing 100191 Peoples R China|Univ Lorraine Inst Jean Lamour CNRS UMR 7198 F-54000 Nancy France|Univ Paris Saclay Univ Paris Sud Ctr Nanosci & Nanotechnol CNRS UMR 9001 F-91120 Palaiseau France;

    Beihang Univ Sch Microelect Fert Beijing Inst BDBC Beijing 100191 Peoples R China|Univ Lorraine Inst Jean Lamour CNRS UMR 7198 F-54000 Nancy France;

    Beihang Univ Sch Microelect Fert Beijing Inst BDBC Beijing 100191 Peoples R China|Beihang Univ Beihang Goertek Joint Microelect Inst Qingdao Res Inst Qingdao 266000 Shandong Peoples R China;

    Beihang Univ Sch Microelect Fert Beijing Inst BDBC Beijing 100191 Peoples R China;

    Beihang Univ Sch Microelect Fert Beijing Inst BDBC Beijing 100191 Peoples R China|Beihang Univ Beihang Goertek Joint Microelect Inst Qingdao Res Inst Qingdao 266000 Shandong Peoples R China;

    Beihang Univ Sch Microelect Fert Beijing Inst BDBC Beijing 100191 Peoples R China;

    Univ Lorraine Inst Jean Lamour CNRS UMR 7198 F-54000 Nancy France;

    Univ Lorraine Inst Jean Lamour CNRS UMR 7198 F-54000 Nancy France;

    Univ Paris Saclay Univ Paris Sud Ctr Nanosci & Nanotechnol CNRS UMR 9001 F-91120 Palaiseau France;

    Univ Paris Saclay Univ Paris Sud Ctr Nanosci & Nanotechnol CNRS UMR 9001 F-91120 Palaiseau France;

    Univ Lorraine Inst Jean Lamour CNRS UMR 7198 F-54000 Nancy France;

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