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Large Fermi surface expansion through anisotropic mixing of conduction and f electrons in the semimetallic Kondo lattice CeBi

机译：通过各向异性混合的大型费米表面膨胀，在半金属kondo格子cebi中的传导和f电子混合

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摘要

Using angle-resolved photoemission spectroscopy (ARPES) and resonant ARPES, we report evidence of strong anisotropic conduction-f electron mixing (c-f mixing) in CeBi by observing a largely expanded Ce 5d pocket at low temperature, with no change in the Bi 6p bands. The anisotropic Fermi surface (FS) expansion is accompanied by a pronounced spectral weight transfer from the local 4f(0) peak of Ce (corresponding to Ce3+) to the itinerant conduction bands near the Fermi level. Careful analysis suggests that the observed large FS change (with a volume expansion of the electron pocket up to 40%) can most naturally be explained by a small valence change (similar to 1%) of Ce, which coexists with a very weak Kondo screening. Our work therefore provides evidence for a FS change driven by real charge fluctuations deep in the Kondo limit, which is highly dependent on the orbital character and momentum and is made possible by the low carrier density.
机译：使用角度解析的光曝光光谱（ARPE）和共振ARPE，我们通过在低温下观察到大量膨胀的CE 5D口袋，报告CEBI中强大的各向异性传导-F电子混合（CF混合）的证据，在低温下没有变化，BI 6P带没有变化。各向异性FERMI表面（FS）膨胀伴随着从CE（对应于CE3 +）的局部4F（0）峰值的明显光谱重量转移到FERMI水平附近的潮断带传导频带。仔细分析表明，观察到的大FS变化（具有高达40％的电子口袋的体积膨胀）可以最自然地解释一下Ce的小价变化（类似于1％）CE，这与非常弱的Kondo筛查共存。因此，我们的工作提供了通过在Kondo限制深处深度的真正电荷波动驱动的FS变化的证据，这高度依赖于轨道性质和动量，并且通过低载体密度实现。

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  • 来源
    《Physical review》 |2019年第15期|155110.1-155110.8|共8页
  • 作者

    Li Peng; Wu Zhongzheng; Wu Fan; Guo Chunyu; Liu Yi; Liu Haijiang; Sun Zhe; Shi Ming; Rodolakis Fanny; McChesney Jessica L.; Cao Chao; Yuan Huiqiu; Steglich Frank; Liu Yang;

  • 作者单位

    Zhejiang Univ Ctr Correlated Matter Hangzhou 310058 Zhejiang Peoples R China|Zhejiang Univ Dept Phys Hangzhou 310058 Zhejiang Peoples R China;

    Zhejiang Univ Ctr Correlated Matter Hangzhou 310058 Zhejiang Peoples R China|Zhejiang Univ Dept Phys Hangzhou 310058 Zhejiang Peoples R China;

    Zhejiang Univ Ctr Correlated Matter Hangzhou 310058 Zhejiang Peoples R China|Zhejiang Univ Dept Phys Hangzhou 310058 Zhejiang Peoples R China;

    Zhejiang Univ Ctr Correlated Matter Hangzhou 310058 Zhejiang Peoples R China|Zhejiang Univ Dept Phys Hangzhou 310058 Zhejiang Peoples R China;

    Univ Sci & Technol China Natl Synchrotron Radiat Lab Hefei 230026 Anhui Peoples R China;

    Paul Scherrer Inst Swiss Light Source CH-5232 Villigen Switzerland;

    Univ Sci & Technol China Natl Synchrotron Radiat Lab Hefei 230026 Anhui Peoples R China;

    Paul Scherrer Inst Swiss Light Source CH-5232 Villigen Switzerland;

    Argonne Natl Lab Adv Photon Source 9700 South Cass Ave Argonne IL 60439 USA;

    Argonne Natl Lab Adv Photon Source 9700 South Cass Ave Argonne IL 60439 USA;

    Hangzhou Normal Univ Dept Phys Hangzhou 311121 Zhejiang Peoples R China;

    Zhejiang Univ Ctr Correlated Matter Hangzhou 310058 Zhejiang Peoples R China|Zhejiang Univ Dept Phys Hangzhou 310058 Zhejiang Peoples R China|Zhejiang Univ Zhejiang Prov Key Lab Quantum Technol & Device Hangzhou 310058 Zhejiang Peoples R China|Nanjing Univ Collaborat Innovat Ctr Adv Microstruct Nanjing 210093 Jiangsu Peoples R China;

    Zhejiang Univ Ctr Correlated Matter Hangzhou 310058 Zhejiang Peoples R China|Zhejiang Univ Dept Phys Hangzhou 310058 Zhejiang Peoples R China;

    Zhejiang Univ Ctr Correlated Matter Hangzhou 310058 Zhejiang Peoples R China|Zhejiang Univ Dept Phys Hangzhou 310058 Zhejiang Peoples R China|Zhejiang Univ Zhejiang Prov Key Lab Quantum Technol & Device Hangzhou 310058 Zhejiang Peoples R China|Nanjing Univ Collaborat Innovat Ctr Adv Microstruct Nanjing 210093 Jiangsu Peoples R China;

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