Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots

Klenovsky Petr; Schliwa Andrei; Bimberg Dieter

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Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots

机译：（INGA）（ASBA）/ GAAS / GAP量子点的电子国家

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Detailed theoretical studies of the electronic structure of (InGa)(AsSb)/GaAs/GaP quantum dots are presented. This system is unique since it exhibits concurrently direct and indirect transitions both in real and momentum space and is attractive for applications in quantum information technology, showing advantages as compared to the widely studied (In, Ga) As/GaAs dots. We proceed from the inspection of the confinement potentials for k not equal 0 and k = 0 conduction and k = 0 valence bands, through the formulation of k . p calculations for k-indirect transitions, up to the excitonic structure of Gamma transitions. Throughout this process we compare the results obtained for dots on both GaP and GaAs substrates, enabling us to make a direct comparison to the (In, Ga) As/GaAs quantum dot system. We also discuss the realization of quantum gates.

机译：提出了（INGA）/ GaAs / Gap量子点的电子结构的详细理论研究。该系统是独一无二的，因为它在真实和动量空间中表现出直接和间接的过渡，并且对于量子信息技术的应用是有吸引力的，与广泛研究（IN，GA）作为/ GaAs点相比，显示优点。通过对k而不是等于0和k = 0传导和k = 0价带的监禁电位进行检查，通过k的配方。 P计算K-间接转变，直至伽马过渡的激发器结构。在此过程中，我们将在两个间隙和GaAs基板上进行比较为在两个间隙和GaAs基板上获得的结果，使我们能够直接比较（In，Ga）AS / GaAs量子点系统。我们还讨论了量子门的实现。

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来源
《Physical review》 |2019年第11期|115424.1-115424.14|共14页
作者
Klenovsky Petr; Schliwa Andrei; Bimberg Dieter;
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Masaryk Univ Fac Sci Dept Condensed Matter Phys Kotlarska 267-2 CS-61137 Brno Czech Republic|Masaryk Univ Cent European Inst Technol Kamenice 753-5 Brno 62500 Czech Republic|Czech Metrol Inst Okruzni 31 Brno 63800 Czech Republic;

Tech Univ Berlin Inst Solid State Phys Hardenbergstr 36 D-10623 Berlin Germany;

Tech Univ Berlin Inst Solid State Phys Hardenbergstr 36 D-10623 Berlin Germany|Chinese Acad Sci CIOMP Bimberg Chinese German Ctr Green Photon Changchun 130033 Jilin Peoples R China;

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1. Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots [J] . Klenovsky Petr, Schliwa Andrei, Bimberg Dieter Physical review, B . 2019,第11期

机译：（INGA）（ASBA）/ GAAS / GAP量子点的电子国家
2. Structural and compositional analysis of (InGa) (AsSb)/GaAs/GaP Stranski–Krastanov quantum dots [J] . Raja S.R.Gajjela, Paul M.Koenraad, Arthur L.Hendriks, 光：科学与应用（英文版） . 2021,第007期

机译：（InGa）（ASSB）/ GaAs / Gap Stranski-Krastanov量子点的结构和组成分析
3. Structural and compositional analysis of(InGa)(AsSb)/GaAs/GaP Stranski-Krastanov quantum dots [J] . Raja S.R.Gajjela, Arthur L.Hendriks, James O.Douglas, 光：科学与应用（英文版） . 2021,第007期

机译：（InGa）（ASSB）/ GaAs / Gap Stranski-Krastanov量子点的结构和组成分析
4. Three-dimensional comprehensive self-consistent simulation of a room-temperature continuous-wave operation of GaAs-based 1.3-/spl mu/m quantum-dot (InGa)As/GaAs vertical-cavity surface-emitting lasers [C] . Sarzala R.P., Mendla P., Wasiak M., Transparent Optical Networks, 2003. Proceedings of 2003 5th International Conference on . 2003

机译：GaAs基1.3- / splμ/ m量子点（InGa）As / GaAs垂直腔面发射激光器室温连续波操作的三维综合自洽仿真
5. Exploring Single Hole States in InAs/GaAs Quantum Dots and Quantum Dot Molecules under 2-D Electric Fields [D] . Ma, Xiangyu. 2018

机译：在2-D电场下探索InAs / GaAs量子点和量子点分子中的单孔状态
6. Cooperative Effects in the Photoluminescence of (InGa)As/GaAs Quantum Dot Chain Structures [O] . Yu I Mazur, VG Dorogan, E Marega Jr, 2010

机译：（InGa）As / GaAs量子点链结构的光致发光中的协同效应
7. Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots [O] . Petr Klenovský, Andrei Schliwa, Dieter Bimberg 2019

机译：（INGA）（ASBA）/ GAAS / GAP量子点的电子国家
8. sp3s and sp3d5s Tight-Binding Parameter Sets for GaAs, AIAs, InAs, GaSb, AISb, InSb, GaP, AIP, InP, for Quantum Dot Simulations [R] . Klimeck, G., Bowen, C., Boykin, T. 2000

机译：sp3s和sp3d5s Gaas，aIa，Inas，Gasb，aIsb，Insb，Gap，aIp，Inp的紧束缚参数集，用于量子点模拟

Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots

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