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首页> 外文期刊>Physical review >Strong magnetoresistance modulation by Ir insertion in a Ta/Ir/CoFeB trilayer
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Strong magnetoresistance modulation by Ir insertion in a Ta/Ir/CoFeB trilayer

机译：通过IR插入在TA / IR / CoFeB三层仪中的强磁阻调制

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摘要

The spin-orbit torque (SOT) switching of trilayers with two heavy-metal layers on the same side of the ferromagnetic metal layer was studied, realizing tunable spin Hall angle, domain-wall motion, and Dzyaloshinskii-Moriya interaction. However, systematic research on the magnetoresistance in such structures is still lacking. In this work, we investigate the anisotropic magnetoresistance (AMR) and the spin Hall magnetoresistance (SMR) by inserting an ultrathin Ir layer (t(Ir) = 1.4 nm) into Ta/CoFeB. The Ir layer with the thickness larger than 0.4 nm can transform the AMR from positive to negative, which is attributed to the electronic structure of Ir. This process realizes the interfacial modulation of AMR, which is generally considered as a bulk property. The SMR ratio decreases first and then increases with increasing Ir thickness, producing the minimum and maximum at t(Ir) = 0.3 nm and t(Ir )= 0.9 nm, respectively, which reflects the ultrasmall spin-diffusion length (0.5 nm) and strong spin-memory loss in Ir. Further analyses combined with the SOT switching measurements unravel the existence of the anomalous Hall magnetoresistance, implying the non-negligible spin accumulation due to the anomalous Hall effect of the ferromagnetic metal. The combination of a large negative AMR and comparatively smaller SMR results in a negative planar Hall resistance. Our findings enrich the understanding of the magnetoresistances of heavy-metal/ferromagnetic metal trilayer systems.
机译：研究了三层螺旋轨道转矩（SOT）与铁磁金属层的同一侧的重金层的三层转换，实现可调旋转霍尔角，域壁运动和Dzyaloshinskii-Moriya相互作用。然而，对这种结构中的磁阻的系统研究仍然缺乏。在这项工作中，我们通过将超薄IR层（T（IR）<= 1.4nm）插入Ta / CoFeB中来研究各向异性磁阻（AMR）和旋转霍米磁阻（SMR）。厚度大于0.4nm的IR层可以将AMR从正为负转换为负，这归因于IR的电子结构。该方法实现了AMR的界面调节，其通常被认为是散装性质。 SMR比首先降低，然后随着IR厚度的增加而增加，在T（IR）= 0.3nm和T（IR）= 0.9nm中产生最小和最大值，这反映了超自联旋转扩散长度（<0.5nm）和IR中强大的自旋记忆损失。进一步分析与SOT切换测量相结合，解开异常霍米马荡磁阻的存在，这意味着由于铁磁金属的异常霍尔效应导致的不可忽略的旋转积累。大负AMR和相对较小的SMR的组合导致负平面霍尔抗性。我们的研究结果丰富了解重金属/铁磁金属三层系统的磁阻。

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  • 来源
    《Physical review》 |2019年第14期|144425.1-144425.6|共6页
  • 作者

    Zhang R. Q.; Liao L. Y.; Chen X. Z.; Wu H. Q.; Pan F.; Song C.;

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    Tsinghua Univ Sch Mat Sci & Engn Key Lab Adv Mat MOE Beijing 100084 Peoples R China;

    Tsinghua Univ Sch Mat Sci & Engn Key Lab Adv Mat MOE Beijing 100084 Peoples R China;

    Tsinghua Univ Sch Mat Sci & Engn Key Lab Adv Mat MOE Beijing 100084 Peoples R China;

    Tsinghua Univ Inst Microelect Beijing 100084 Peoples R China;

    Tsinghua Univ Sch Mat Sci & Engn Key Lab Adv Mat MOE Beijing 100084 Peoples R China;

    Tsinghua Univ Sch Mat Sci & Engn Key Lab Adv Mat MOE Beijing 100084 Peoples R China;

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