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Topological properties of multilayers and surface steps in the SnTe material class

机译:SNTE材料类多层和表面步骤的拓扑特性

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摘要

Surfaces of multilayer semiconductors typically have regions of atomically flat terraces separated by atom-high steps. Here we investigate the properties of the low-energy states appearing at the surface atomic steps in Sn1-xPbxTe1-ySey. We identify the important approximate symmetries and use them to construct relevant topological invariants. We calculate the dependence of mirror- and spin-resolved Chern numbers on the number of layers and show that the step states appear when these invariants are different on the two sides of the step. Moreover, we find that a particle-hole symmetry can protect one-dimensional Weyl points at the steps. Since the local density of states is large at the step the system is susceptible to different types of instabilities, and we consider an easy-axis magnetization as one realistic possibility. We show that magnetic domain walls support low-energy bound states because the regions with opposite magnetization are topologically distinct in the presence of nonsymmorphic chiral and mirror symmetries, providing a possible explanation for the zero-bias conductance peak observed in the recent experiment [Mazur et al., Phys. Rev. B 100, 041408(R) (2019)].
机译:多层半导体的表面通常具有由原子高步分离的原子平台的区域。在这里,我们研究了SN1-XPBXTE1-YSEY中出现在表面原子步骤的低能量状态的性质。我们确定了重要的近似对称性,并使用它们来构建相关的拓扑不变。我们计算镜像和旋转分辨的CHERN号码对层数的依赖性,并显示在步骤的两侧不同的情况下,当这些不变性不同时出现阶梯状态。此外,我们发现粒子孔对称可以在步骤中保护一维的Weyl点。由于状态的局部密度大在步骤中大量,系统易受不同类型的不稳定性的影响,并且我们认为易轴磁化为一种现实的可能性。我们表明,磁畴壁支持低能量界定状态,因为具有相反磁化的区域在非对杂性手性手性和镜面对称存在下拓扑上不同,从而为最近实验中观察到的零偏置电导峰提供了可能的解释[Mazur et al。,phy。 Rev. B 100,041408(R)(2019)]。

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  • 来源
    《Physical review》 |2019年第12期|121107.1-121107.6|共6页
  • 作者单位

    Polish Acad Sci Inst Phys Int Res Ctr MagTop Aleja Lotnikow 32-46 PL-02668 Warsaw Poland;

    Polish Acad Sci Inst Phys Int Res Ctr MagTop Aleja Lotnikow 32-46 PL-02668 Warsaw Poland;

    Polish Acad Sci Inst Phys Int Res Ctr MagTop Aleja Lotnikow 32-46 PL-02668 Warsaw Poland;

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