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首页> 外文期刊>Physical review >Superconducting and tetragonal-to-orthorhombic transitions in single crystals of FeSe_(1-x)Te_x (0≤ x ≤ 0.61)
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Superconducting and tetragonal-to-orthorhombic transitions in single crystals of FeSe_(1-x)Te_x (0≤ x ≤ 0.61)

机译：FESE_（1-x）TE_x（0≤x≤0.61）的单晶中的超导和四方对正交转变

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摘要

Single crystals of FeSe1-xTex were grown for 0 = x = 0.41 by a flux method and at x = 0.61 by chemical vapor transport in order to study the Te substitution effects on the quality of the single crystals and on their superconducting characteristics. From the in-plane resistivity data of the grown crystals, we found that the superconducting transition temperature T-c slightly decreases with increasing the doping level of x up to around x = 0.2 - 0.3, then begins to increase with x at around x = 0.4, and reaches a maximum around x = 0.6. These experimental facts are contrasted with the results of thin films where T-c increases up to 23 K around x = 0.2. We also observed an anomaly in the temperature dependence of the in-plane resistivity due to the tetragonal-to-orthorhombic structural transition T-s, which decreases nearly linearly with increasing x until finally disappearing near x = 0.5. These features were not reported in previous studies performed with polycrystalline and thin film samples.
机译：通过助焊法和X = 0.61通过化学蒸汽传输生长Fesce1-Xtex的单晶0 = x = 0.41，以研究TE取代对单晶的质量和超导特性的替代作用。从成长晶体的面内电阻率数据，我们发现超导转变温度Tc略微降低，随着X×x = 0.2-0.3的X×x = 0.3的掺杂水平增加，然后在x = 0.4周围开始增加x = 0.4，并达到X = 0.6的最大值。这些实验事实与薄膜的结果形成对比，其中T-C在X = 0.2周围增加23k。我们还观察到因四角到正交结构转变T-S引起的面内电阻率的温度依赖性的异常，这几乎线性地随着X而降低，直到最终消失在X = 0.5附近。在以前的研究中没有报道这些特征，用多晶和薄膜样品进行。

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    《Physical review》 |2019年第22期|224516.1-224516.7|共7页
  • 作者

    Terao Kotaro; Kashiwagi Takanari; Shizu Tomoyuki; Klemm Richard A.; Kadowaki Kazuo;

  • 作者单位

    Univ Tsukuba Grad Sch Pure & Appl Sci 1-1-1 Tennodai Tsukuba Ibaraki 3058573 Japan;

    Univ Tsukuba Grad Sch Pure & Appl Sci 1-1-1 Tennodai Tsukuba Ibaraki 3058573 Japan|Univ Tsukuba Fac Pure & Appl Sci Div Mat Sci 1-1-1 Tennodai Tsukuba Ibaraki 3058573 Japan;

    Univ Tsukuba Grad Sch Pure & Appl Sci 1-1-1 Tennodai Tsukuba Ibaraki 3058573 Japan;

    Univ Cent Florida Dept Phys 4111 Libra Dr Orlando FL 32816 USA;

    Univ Tsukuba Grad Sch Pure & Appl Sci 1-1-1 Tennodai Tsukuba Ibaraki 3058573 Japan|Univ Tsukuba Fac Pure & Appl Sci Div Mat Sci 1-1-1 Tennodai Tsukuba Ibaraki 3058573 Japan|Univ Tsukuba Algae Biomass & Energy Syst Res & Dev Ctr 1-1-1 Tennodai Tsukuba Ibaraki 3058572 Japan;

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