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Higher-order exceptional points in ferromagnetic trilayers

机译：铁磁性三层三层的高阶卓越点

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摘要

Magnetometers with exceptional sensitivity are highly demanded in solving a variety of physical and engineering problems, such as measuring Earth's weak magnetic fields and prospecting mineral deposits and geological structures. It has been shown that the non-Hermitian degeneracy at exceptional points (EPs) can provide a new route for that purpose, because of the nonlinear response to external perturbations. One recent work [H. Yang et al. Phys. Rev. Lett. 121, 197201 (2018)] has made the first step to realize the second-order magnonic EP in ferromagnetic bilayers respecting the parity-time symmetry. In this paper, we generalize the idea to higher-order cases by considering ferromagnetic trilayers consisting of a gain, a neutral, and a (balanced-)loss layer. We observe both second- and third-order magnonic EPs by tuning the interlayer coupling strength, the external magnetic field, and the gain-loss parameter. We show that the magnetic sensitivity can be enhanced by three orders of magnitude comparing to the conventional magnetic tunneling junction-based sensors. Our results pave the way for studying high-order EPs in purely magnetic system and for designing magnetic sensors with ultrahigh sensitivity.
机译：在解决各种物理和工程问题方面，磁力计具有卓越的敏感性，例如测量地球弱磁场和勘探矿物沉积物和地质结构。已经表明，特殊点（EPS）处的非密封天才（EPS）可以为此目的提供新的路线，因为对外部扰动的非线性响应。最近的一项工作[H.杨等人。物理。 rev. lett。 121,197201（2018）]首先实现了致奇级对称性的铁磁双层中的二阶磁力ep。在本文中，我们通过考虑由增益，中性和（平衡）损耗层组成的铁磁三层来概括更高阶的情况。通过调整层间耦合强度，外部磁场和增益损耗参数，我们观察二阶和三阶agagnone eps。我们表明，与传统的磁隧道连接基传感器相比，可以通过三个数量级来增强磁敏度。我们的结果为纯磁系统中的高阶EPS铺平了途径，并为具有超高敏感性设计磁传感器。

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  • 来源
    《Physical review》 |2020年第14期|144414.1-144414.8|共8页
  • 作者

    Tianlin Yu; Huanhuan Yang; Lingling Song; Peng Yan; Yunshan Cao;

  • 作者单位

    School of Electronic Science and Engineering and State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China;

    School of Electronic Science and Engineering and State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China;

    School of Electronic Science and Engineering and State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China;

    School of Electronic Science and Engineering and State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China;

    School of Electronic Science and Engineering and State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China;

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