Lifting of spin blockade by charged impurities in Si-MOS double quantum dot devices

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• 来源
  《Physical review》 |2020年第15期|155411.1-155411.11|共11页
• 作者

  Cameron King; Joshua S. Schoenfield; M. J. Calderon; Belita Koiller; Andre Saraiva; Xuedong Hu; HongWen Jiang; Mark Friesen; S. N. Coppersmith;

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• 作者单位

  Department of Physics University of Wisconsin-Madison Madison Wisconsin 53706 USA;

  Department of Physics and Astronomy University of California Los Angeles Los Angeles California 90095 USA;

  Instituto de Ciencia de Materiales de Madrid ICMM-CSIC Cantoblanco E-28049 Madrid (Spain);

  Instituto de Fisica Universidade Federal do Rio de Janeiro C.P. 68528 21941-972 Rio de Janeiro Brazil;

  Instituto de Fisica Universidade Federal do Rio de Janeiro C.P. 68528 21941-972 Rio de Janeiro Brazil School of Electrical Engineering and Telecommunications The University of New South Wales Sydney NSW 2052 Australia;

  Department of Physics University at Buffalo SUNY Buffalo New York 14260-1500 USA;

  Department of Physics and Astronomy University of California Los Angeles Los Angeles California 90095 USA;

  Department of Physics University of Wisconsin-Madison Madison Wisconsin 53706 USA;

  Department of Physics University of Wisconsin-Madison Madison Wisconsin 53706 USA School of Physics The University of New South Wales Sydney NSW 2052 Australia;

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• 正文语种 eng
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