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首页> 外文期刊>Physical review >Role of weak interlayer coupling in ultrafast exciton-exciton annihilation in two-dimensional rhenium dichalcogenides
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Role of weak interlayer coupling in ultrafast exciton-exciton annihilation in two-dimensional rhenium dichalcogenides

机译：弱层间耦合在二维铼二甲硅藻中超快激子湮灭中的弱夹层耦合

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摘要

Strong interactions between excitons are a characteristic feature of two-dimensional (2D) semiconductors, determining important excitonic properties, such as exciton lifetime, coherence, and photon-emission efficiency. Rhenium disulfide (ReS_2), a member of the 2D transition-metal dichalcogenide (TMD) family, has recently attracted great attention due to its unique excitons that exhibit excellent polarization selectivity and coherence features. However, an in-depth understanding of exciton-exciton interactions in ReS_2 is still lacking. Here we used ultrafast pump-probe spectroscopy to study exciton-exciton interactions in monolayer (1L), bilayer (2L), and triple layer ReS_2. We directly measure the rale of exciton-exciton annihilation, a representative Auger-type interaction between excitons. It decreases with increasing layer number, as observed in other 2D TMDs. However, while other TMDs exhibit a sharp weakening of exciton-exciton annihilation between 1L and 2L, such behavior was not observed in ReS_2. We attribute this distinct feature in ReS_2 to the relatively weak interlayer coupling, which prohibits a substantial change in the electronic structure when the thickness varies. This work not only highlights the unique excitonic properties of ReS_2 but also provides novel insight into the thickness dependence of exciton-exciton interactions in 2D systems.
机译：激子之间的强相互作用是二维（2D）半导体的特征，确定重要的激子性质，例如Exciton寿命，相干性和光子发射效率。二维过渡金属二甲基（TMD）家族的铼二硫化物（RES_2）最近引起了它的独特激子引起了极大的关注，其具有出色的极化选择性和相干特征。然而，仍然缺乏对Exciton-Exciton相互作用的深入理解。在这里，我们使用超快泵探针光谱学研究单层（1L），双层（2L）和三层RES_2中的Exciton-Exciton相互作用。我们直接衡量激子激的喧嚣，这是激子之间的代表性螺旋型相互作用。它随着层数的增加而减少，如在其他2D TMDS中所观察到的。然而，虽然其他TMDS表现出激子激子湮灭的急剧削弱在1L和2L之间，但在RES_2中未观察到这种行为。我们将RES_2中的该不同特征归因于相对较弱的中间层耦合，其在厚度变化时禁止电子结构的大量变化。这项工作不仅突出了RES_2的独特兴奋性，而且还提供了对2D系统中Exciton-Exciton相互作用的厚度依赖性的新颖洞察。

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  • 来源
    《Physical review》 |2020年第17期|174309.1-174309.8|共8页
  • 作者

    Sangwan Sim; Doeon Lee; Jekwan Lee; Myungjun Cha; Soonyoung Cha; Wonhyeok Heo; Sungjun Cho; Wooyoung Shim; Kyusang Lee; Jinkyoung Yoo; Rohit P. Prasankumar; Hyunyong Choi; Moon-Ho Jo;

  • 作者单位

    Division of Electrical Engineering Hanyang University Ansan 15588 Korea Center for Artificial Low Dimensional Electronic Systems Institute for Basic Science (IBS) Pohang 37673 Korea;

    Department of Electrical and Computer Engineering University of Virginia Charlottesville Virginia 22903 USA;

    Department of Physics and Astronomy Institute of Applied Physics Seoul National University Seoul 08826 Korea;

    Department of Physics and Astronomy Institute of Applied Physics Seoul National University Seoul 08826 Korea;

    Center for Artificial Low Dimensional Electronic Systems Institute for Basic Science (IBS) Pohang 37673 Korea;

    Department of Physics and Astronomy Institute of Applied Physics Seoul National University Seoul 08826 Korea School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Korea;

    Department of Materials Science and Engineering Yonsei University Seoul 03722 Korea;

    Department of Materials Science and Engineering Yonsei University Seoul 03722 Korea;

    Department of Electrical and Computer Engineering University of Virginia Charlottesville Virginia 22903 USA Departments of Materials Science and Engineering University of Virginia Charlottesville Virginia 22903 USA;

    Center for Integrated Nanotechnologies Los Alamos National Laboratory Los Alamos New Mexico 87545 USA;

    Center for Integrated Nanotechnologies Los Alamos National Laboratory Los Alamos New Mexico 87545 USA;

    Department of Physics and Astronomy Institute of Applied Physics Seoul National University Seoul 08826 Korea;

    Center for Artificial Low Dimensional Electronic Systems Institute for Basic Science (IBS) Pohang 37673 Korea Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) Pohang 37673 Korea;

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