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Mixed-strategy approach to band-edge analysis and modeling in semiconductors

机译：半导体带边坡分析和建模的混合策略方法

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摘要

In semiconductor physics, the Urbach rule describes an exponential dependence of the UV-Vis absorption coefficient on photon energy at the band edge. The rule is so ubiquitously applied that a single common mechanism, variability in the local potential, is generally considered to be the cause of exponential band edges. Variability in the local potential may be caused by alloy inhomogeneity, structural defects, impurities, thermal excitation, or any other mechanism that interrupts ideal crystallinity and creates disorder. A crucial point of the Urbach rule is its development for band edges which approach linearity when plotted on a logarithmic scale. The rule was not developed in the context of nonlinear band edges with complex fine structure. Even so, this model has been applied extensively to band edges with such features. Using differential analysis and deconvolution, we develop an analytical technique capable of separating the components responsible for the fine structure observed. This approach reduces challenging signal-artifact convolution problems to a simple linear combination. Furthermore, we develop a model that can be applied to the nonlinear band-edge signals extracted. We show that in the limiting case of linearity, our model is consistent with and produces the same results as the linear Urbach model. Our model is capable of bypassing "tailing" as an indirect measure of the spread in the local potential and gives a direct measure of this quantity.
机译：在半导体物理学中，URBACH规则描述了UV-Vis吸收系数对带边缘的光子能量的指数依赖性。规则如此普遍地应用了单一的共同机制，局部电位的可变性，通常被认为是指数带边的原因。局部电位的可变性可能是由合金不均匀性，结构缺陷，杂质，热激发或中断理想结晶度的任何其他机制引起的。 URBACH规则的一个关键点是它对频带边缘的开发，在对数刻度上绘制时接近线性度。该规则不是在具有复杂精细结构的非线性带边的背景下开发的。即便如此，这种模型已被广泛应用于具有此类特征的频带边缘。使用差分分析和解卷积，我们开发了一种能够分离负责的细结构的分析技术。这种方法会减少对简单的线性组合的具有挑战性的信号伪影卷积问题。此外，我们开发了一种可以应用于提取的非线性带边缘信号的模型。我们表明，在线性度的限制情况下，我们的模型与线性Urbach模型相一致并产生相同的结果。我们的模型能够绕过“拖尾”作为局部潜力的分布的间接测量，并提供此数量的直接测量。

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  • 来源
    《Physical review》 |2020年第19期|195308.1-195308.15|共15页
  • 作者

    Amrah Canul; Dinesh Thapa; Jesse Huso; Leah Bergman; Richard Vaughan Williams; Ruprecht Machleidt;

  • 作者单位

    Department of Physics University of Idaho Moscow Idaho 83844 USA;

    Department of Physics University of Idaho Moscow Idaho 83844 USA;

    Department of Physics University of Idaho Moscow Idaho 83844 USA;

    Department of Physics University of Idaho Moscow Idaho 83844 USA;

    Department of Chemistry University of Idaho Moscow Idaho 83844 USA;

    Department of Physics University of Idaho Moscow Idaho 83844 USA;

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