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Large RKKY coupling from multiple scattering in armchair graphene nanoribbons

机译:来自扶手椅石墨烯纳米波纹多散射的大型rkky耦合

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摘要

We consider the Ruderman-Kittel-Kasuya-Yosida (RKKY) type coupling between two magnetic impurities on metallic armchair graphene nanoribbons (AGNR). Our key findings are that the lowest-order RKKY (LO-RKKY) coupling does not describe the coupling physics, and a full implementation of electron multiple scattering in RKKY coupling leads to orders of magnitude enhancement in the coupling magnitude. Key physics of our findings are revealed in our analysis of the LO-RKKY coupling. Within the Born approximation for the electron-magnetic-impurity scattering, the LO-RKKY coupling has inherited the singular density of states feature so that incident electrons at AGNR-subband band edges give finite contributions. Our other finding, that contribution from a gapped subband to LO-RKKY coupling is very small, implies then that severe cancellations must have occurred between states at its subband band edges and states not at its subband band edges. Magnitudes of the cancellation terms are each of the same order as the LO-RKKY coupling. This cancellation no longer occurs when full multiple scattering is reinstated. Contributions to the RKKY coupling from stales at subband band edges are entirely suppressed, due to the restoring of the finiteness in the wave functions of these states. Contributions from states not from the subband band edges, though modified, retain their orders of magnitude. Analytic expressions have been obtained to further illustrate the physics.
机译:我们认为金属扶手椅石墨烯纳米(AGNR)上的两个磁性杂质之间的鲁德曼-Kittel-Kasuya-Yosida(Rkky)型耦合。我们的关键发现是,最低阶rkky(LO-Rkky)耦合未描述耦合物理学,并且在耦合幅度中的耦合耦合中的电子多个散射的完整实现导致耦合幅度的数量级增强。在我们对LO-Rkky耦合的分析中,我们发现的关键物理学。在电子磁 - 杂质散射的出生近似内,LO-Rkky耦合继承了各种特征的奇异密度,使得AGNR-子带带边的入射电子提供有限贡献。我们的另一个发现,从盖子子带到LO-rkky耦合的贡献非常小,因此必须在其子带带边的状态之间发生严重的取消,并且不在其子带带边缘处的状态。取消术语的幅度与LO-rkky耦合相同的顺序。当恢复完整多次散射时,此取消不再发生。由于这些状态的波函数中的有限度还原,因此对子带带边缘的速度从子带带边的速度的贡献。来自子带频段边缘的贡献虽然修改,但是修改了它们的数量级。已经获得了分析表达以进一步说明物理学。

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  • 来源
    《Physical review》 |2020年第19期|195419.1-195419.12|共12页
  • 作者

    Van Minh Nguyen; C. S. Chu;

  • 作者单位

    Department of Electrophysics National Chicio Tung University Hsinchu 30010 Taiwan;

    Department of Electrophysics National Chicio Tung University Hsinchu 30010 Taiwan;

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  • 正文语种 eng
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