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Spontaneous emission of a quantum emitter near a Chern insulator: Interplay of time-reversal symmetry breaking and Van Hove singularity

机译:Chern Insulator附近的量子发射器的自发排放:时间逆转对称破碎和梵申奇异性的相互作用

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摘要

We consider the generic problem of a two-level quantum emitter near a two-dimensional Chern insulator in the dipole approximation, and study how the frequency-dependent response and electronic density of states of the insulator modifies the transition rate of the emitter between the ground and excited levels. To this end. we obtain the full real-frequency behavior of the conductivity tensor by performing a tight-binding calculation based on the Qi-Wu-Zhang model and using a Kubo formula, and derive the full electromagnetic Green tensor of the system, which breaks Onsager reciprocity. This enables us to find that for frequencies smaller than the maximum band gap, the system is sensitive to time-reversal symmetry breaking, whereas for much larger frequencies the system becomes insensitive, with implications for the discrimination of the state of a circularly polarized dipole emitter. We also study the impact of a Van Hove singularity on the surface-induced correction to the transition rate, finding that it can enhance its amplitude by a few orders of magnitude compared to the case where the conductivity is set to its static value. By considering configurations in which the dipole is circularly polarized or parallel with the surface of the Chern insulator, we find that the surface correction to the transition rate can exhibit a novel decay with sine-integral-like oscillations.
机译:我们考虑在偶极近似的二维Chern绝缘体附近的双层量子发射器的通用问题,研究绝缘体的频率依赖性响应和电子密度如何改变地面之间发射器的过渡率和兴奋的水平。为此。通过基于Qi-uu-Zhang模型进行紧密结合计算并使用Kubo公式来获得电导率张量的完整实际频率行为,并推导出系统的全电磁绿色张量,这破坏了oneSager互惠性。这使我们能够发现,对于小于最大频带隙的频率,系统对时间反转对称性断裂敏感,而对于更大的频率,系统变得不敏感,具有对圆极化偶极发射器的状态的影响。 。我们还研究了VAN HOVE奇点对转换率的表面诱导校正的影响,发现它可以通过导电性设定为其静态值的情况而通过几个数量级增强其幅度。通过考虑偶极子圆偏振或与Chern绝缘体的表面循环偏振或平行的配置,我们发现到过渡率的表面校正可以表现出一种具有正弦积分振荡的新型衰减。

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  • 来源
    《Physical review》 |2020年第20期|205410.1-205410.24|共24页
  • 作者单位

    Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University 21 Nanyang Link Singapore 637371;

    Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University 21 Nanyang Link Singapore 637371;

    Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University 21 Nanyang Link Singapore 637371;

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