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首页> 外文期刊>Physical review >Valley degree of freedom in ferromagnetic Janus monolayer H-VSSe and the asymmetry-based tuning of the valleytronic properties
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Valley degree of freedom in ferromagnetic Janus monolayer H-VSSe and the asymmetry-based tuning of the valleytronic properties

机译：铁磁性Janus Monolayer H-VSSE自由度和基于不对称的谷谷特性的调整

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摘要

By using density-functional theory-based GW method, we studied the valley degree of freedom of Janus monolayer VSSe. The GW corrections lead to a doubling of the band gap and change the band dispersion considerably, indicating significant many-body effects. VSSe is confirmed to be ferromagnetic, which breaks the time-reversal symmetry and the odd parity of the Berry curvature in momentum space. The dissimilar magnitudes of Berry curvatures of the inequivalent valleys give rise to appreciable anomalous Hall conductivity (AHC). The calculated valley optical response of VSSe exhibits a clear valley-selective circular dichroism. The ferromagnetism induces large valley-Zeeman splitting, making it possible to realize the selective valley excitation even by unpolarized light. The Janus VSSe is more tunable by external fields because of symmetry breaking. Due to the relief of time-reversal symmetry, the valley-Zeeman splitting can be continuously tuned by varying the magnetization direction. The loss of mirror symmetry in VSSe enables a bidirection modulation of the band gap by changing the direction of electric field. The strain can linearly tune the valley gap in a considerable range. The Berry curvature and AHC can be effectively regulated in the external fields.
机译：通过使用基于密度功能理论的GW方法，我们研究了Janus Monolayer VSSE的自由度。 GW校正导致带隙的加倍，并显着改变频带分散，表明很多人体效果。 VSSE被证实是铁磁性的，这破坏了时间逆转对称和浆果曲率在动量空间中的奇数奇偶阶段。不平等的山谷的浆果曲率的不同幅度引起了可观的异常霍尔电导率（AHC）。 VSSE的计算谷光学响应呈现出清晰的谷选择性圆形二色性。铁磁场诱导大谷塞曼分裂，使得即使通过不偏振的光，也可以实现选择性谷励磁。由于对称性断开，Janus VSSE更加可调。由于减轻了时转对称性，可以通过改变磁化方向来连续调谐谷塞曼分裂。通过改变电场的方向，VSSE中的镜像对称的损失使得带隙的双向性调制。该菌株可以在相当大的范围内线性地调整谷间隙。浆果曲率和AHC可以有效地调节在外部领域。

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  • 来源
    《Physical review》 |2020年第24期|245416.1-245416.8|共8页
  • 作者

    Chaobo Luo; Xiangyang Peng; Jinfeng Qu; Jianxin Zhong;

  • 作者单位

    Hunan Key Laboratory for Micro-Nano Energy Materials and Devices School of Physics and Optoelectronics Xiangtan University Hunan 411105 People's Republic of China;

    Hunan Key Laboratory for Micro-Nano Energy Materials and Devices School of Physics and Optoelectronics Xiangtan University Hunan 411105 People's Republic of China;

    Hunan Key Laboratory for Micro-Nano Energy Materials and Devices School of Physics and Optoelectronics Xiangtan University Hunan 411105 People's Republic of China;

    Hunan Key Laboratory for Micro-Nano Energy Materials and Devices School of Physics and Optoelectronics Xiangtan University Hunan 411105 People's Republic of China;

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