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首页> 外文期刊>Physical review >Disentangling elastic and inelastic scattering pathways in the intersubband electron dynamics of n-type Ge/SiGe quantum fountains
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Disentangling elastic and inelastic scattering pathways in the intersubband electron dynamics of n-type Ge/SiGe quantum fountains

机译：N型GE / SiGe量子喷泉的Intersubband电子动力学中的解开弹性和无弹性散射路径

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摘要

n-type Ge/SiGe quantum wells have been suggested as a promising platform for the realization of a Si-compatible THz laser. Focusing on this material system, we have developed a numerical model to describe the intersubband carrier dynamics which restores the equilibrium after pulsed optical excitation in asymmetric coupled Ge/SiGe quantum wells. We take into account inelastic and elastic scattering processes and investigate different quantum-well geometries, doping densities, and excitation regimes. In this configuration space, we disentangle the effect on the overall dynamics of each scattering channel and provide intersubband relaxation times, finding larger values with respect to Ⅲ-Ⅴ based materials, thanks to the weaker electron-phonon coupling with respect to Ⅲ-Ⅴ compounds. Finally, the model is used to study and optimize the population inversion between the first- and second-excited subband levels and to assess its dependence on the lattice temperature, providing a sound theoretical framework to guide forthcoming experiments.
机译：已经提出了N型GE / SIGE量子孔作为实现SI兼容的THz激光的有希望的平台。专注于该材料系统，我们开发了一种数字模型来描述在不对称耦合GE / SiGe量子孔中腐烂的光学激发后恢复平衡的三通带载体动态。我们考虑了无弹性和弹性散射过程，并研究了不同的量子阱几何形状，掺杂密度和激励制度。在这种配置空间中，我们解开了对每个散射通道的整体动态的影响，并提供了相对于Ⅲ-β基础的基于Ⅲ-β的材料的较大值的效果，相对于Ⅲ-β化合物的较弱。最后，该模型用于研究和优化第一和第二激发和第二兴奋的子带电平之间的人口反转，并评估其对晶格温度的依赖性，提供了一种用于即将到来的实验的声音理论框架。

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  • 来源
    《Physical review》 |2020年第24期|245302.1-245302.14|共14页
  • 作者

    Luigi Bagolini; Michele Montanari; Luca Persichetti; Luciana Di Gaspare; Giovanni Capellini; Michele Ortolani; Monica De Seta; Michele Virgilio;

  • 作者单位

    Dipartimento di Scienze Universita degli Studi Roma Tre V.le G. Marconi 446 I-00146 Rome Italy;

    Dipartimento di Scienze Universita degli Studi Roma Tre V.le G. Marconi 446 I-00146 Rome Italy;

    Dipartimento di Scienze Universita degli Studi Roma Tre V.le G. Marconi 446 I-00146 Rome Italy;

    Dipartimento di Scienze Universita degli Studi Roma Tre V.le G. Marconi 446 I-00146 Rome Italy;

    Dipartimento di Scienze Universita degli Studi Roma Tre V.le G. Marconi 446 I-00146 Rome Italy IHP-Leibniz-Institut fuer Innovative Mikroelektronik Im Technologiepark 25 D-15236 Frankfurt (Oder) Germany;

    Dipartimento di Fisica Universita di Roma 'Sapienza ' Piazzale A. Mow 2 I-00185 Rome Italy;

    Dipartimento di Scienze Universita degli Studi Roma Tre V.le G. Marconi 446 I-00146 Rome Italy;

    Dipartimento di Fisica 'E. Fermi' Universita di Pisa Largo Pontecorvo 3 I-56127 Pisa Italy;

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