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首页> 外文期刊>Physical review >Tunneling mechanism in a (Ga,Mn)As/GaAs-based spin Esaki diode investigated by bias-dependent shot noise measurements
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Tunneling mechanism in a (Ga,Mn)As/GaAs-based spin Esaki diode investigated by bias-dependent shot noise measurements

机译：通过偏压依赖射击噪声测量研究了AS / GAAS的旋转二极管的（GA，MN）的隧道机制

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摘要

Electron transport across a tunneling barrier is governed by intricate and diverse causes such as interface conditions, material properties, and device geometries. Here, by measuring the shot noise, we investigate electron transport in a (Ga.Mn)As/GaAs-based spin Esaki diode junction over a wide range of bias voltage. The asymmetric electronic band profile across the junction allows us to tune the types of tunneling process. By changing the bias voltage in a single device, we successively address the conventional direct tunneling, the excess current conduction through the mid-gap localized states, and the thermal excitation current conduction. These observations lead to a proper comparison of the bias dependent Fano factors. While the Fano factor is unity for the direct tunneling, it is pronouncedly reduced in the excess current region. Thus, we have succeeded in evaluating several types of conduction process with the Fano factor in a single junction.
机译：隧道屏障的电子传输是通过复杂和多样的原因（如界面条件，材料特性和设备几何形状）管辖。这里，通过测量射击噪声，我们在宽范围的偏置电压上调查AS / GAAMN的自旋ESAKI二极管结的电子传输。跨越结的非对称电子频带谱允许我们调整隧道过程的类型。通过改变单个装置中的偏置电压，我们连续地通过中间隙局部状态和热激励电流传导来解决传统的直接隧道，过多电流传导。这些观察结果导致偏置依赖性扇动因子的适当比较。虽然FANO因子是直接隧道的统一，但在过量的电流区域中发声缩短。因此，我们成功地评估了几种类型的传导过程，在单个结中的扇形因子。

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  • 来源
    《Physical review》 |2020年第4期|045308.1-045308.7|共7页
  • 作者

    T. Arakawa; J. Shiogai; M. Maeda; M. Ciorga; M. Utz; D. Schuh; Y. Niimi; M. Kohda; J. Nitta; D. Bougeard; D. Weiss; K. Kobayashi;

  • 作者单位

    Graduate School of Science Osaka University Toyonaka Japan Center for Spintronics Research Network Osaka University Toyonaka Japan;

    Institute for Materials Research Tohoku University Sendai Japan;

    Graduate School of Science Osaka University Toyonaka Japan;

    Institute of Experimental and Applied Physics University of Regensburg D-93040 Regensburg Germany;

    Institute of Experimental and Applied Physics University of Regensburg D-93040 Regensburg Germany;

    Institute of Experimental and Applied Physics University of Regensburg D-93040 Regensburg Germany;

    Graduate School of Science Osaka University Toyonaka Japan Center for Spintronics Research Network Osaka University Toyonaka Japan;

    Department of Materials Science Tohoku University Sendai Japan Center for Spintronics Research Network Tohoku University Sendai Japan Center for Science and Innovation in Spintronics (Core Research Cluster) Organization for Advanced Studies Tohoku University Sendai Japan;

    Department of Materials Science Tohoku University Sendai Japan Center for Spintronics Research Network Tohoku University Sendai Japan Center for Science and Innovation in Spintronics (Core Research Cluster) Organization for Advanced Studies Tohoku University Sendai Japan;

    Institute of Experimental and Applied Physics University of Regensburg D-93040 Regensburg Germany;

    Institute of Experimental and Applied Physics University of Regensburg D-93040 Regensburg Germany;

    Graduate School of Science Osaka University Toyonaka Japan Institute for Physics of Intelligence and Department of Physics The University of Tokyo Tokyo Japan;

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