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GaN thermal transport limited by the interplay of dislocations and size effects

机译：GaN热运输通过位错和尺寸效应的相互作用有限

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摘要

Measurements and first-principles calculations probe the temperature-dependent thermal conductivity (k) of GaN films with large densities of highly oriented dislocations. We demonstrate that phonon-dislocation scattering is weaker than suggested by previous measurements, likely due to sample and experiment size effects. Nonetheless, dislocation-limited k is observed in samples with large dislocation densities and at lower temperatures where k anisotropy is also observed. Combination of experiment and theory give insights into the interplay of thermal resistance mechanisms limiting GaN functionalities and suggest pathways for tuning k via defect engineering.
机译：测量和第一原理计算探测GaN薄膜的温度依赖性导热率（k），具有大面向脱位的大密度。我们证明，由于样品和实验尺寸效应，可能性，错位脱位散射比先前测量的提出较弱。尽管如此，在具有大错密度的样品中观察到脱位限制k，并且在较低的温度下也观察到K各向异性的较低温度。实验与理论的组合能够实现限制GaN功能的热阻机制的相互作用，并通过缺陷工程调整K的途径。

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  • 来源
    《Physical review》 |2020年第1期|014313.1-014313.10|共10页
  • 作者

    H. Li; R. Hanus; C. A. Polanco; A. Zeidler; G. Koblmueller; Y. K. Koh; L. Lindsay;

  • 作者单位

    Department of Mechanical Engineering National University of Singapore 117576 Singapore;

    Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA;

    Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA;

    Walter Schottky Institute and Physics Department Technical University of Munich 85748 Garching Germany;

    Walter Schottky Institute and Physics Department Technical University of Munich 85748 Garching Germany;

    Department of Mechanical Engineering National University of Singapore 117576 Singapore Centre of Advanced 2D Materials National University of Singapore 117542 Singapore;

    Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA;

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