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Steplike spectral distribution of photoelectrons at the percolation threshold in heavily p-doped GaAs

机译:高掺杂GaAs中渗透阈值下光电子的光谱分布

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摘要

The origin of the steplike shoulder on the high-energy side of the low-temperature photoluminescence spectrum of heavily p-doped GaAs is studied experimentally. It is shown that it is controlled by both the Fermi-Dirac distribution of the holes and the energy distribution of the photoexcited electrons exhibiting a sharp steplike dependence. The latter results from abrupt changes in the energy relaxation rate at the percolation threshold separating localized from delocalized electron states. A comprehensive set of optical techniques based on spin orientation of electrons, namely, the Hanle effect, time- and polarization-resolved photoluminescence, as well as transient pump-probe Faraday rotation, are used for these studies. Two different electron ensembles with substantially different lifetimes of 20 and 280 ps are identified. Their spin relaxation times are longer than 2 ns, so that the spin lifetime is limited by the electron lifetime. The relative contribution of short- and long-lived photoexcited electrons to the emission spectrum changes abruptly at the step in the high-energy photoluminescence tail. For energies above the percolation threshold, the electron states are empty due to fast energy relaxation, while for lower energies the relaxation is suppressed and the majority of photoelectrons populates the states located there.
机译:实验研究了高温光致发光光谱的高能光致发光光谱的高能量侧的载体的起源。结果表明,它由孔的Fermi-Dirac分布和光屏蔽电子的能量分布的控制来控制,该光巧的电子表现出尖锐的温度依赖性。后者导致能量松弛率的突然变化,其渗透阈值分离从分层电子态定位。基于电子的自旋取向的一组综合光学技术,即Hanle效应,时间和极化分辨的光致发光以及瞬态泵探针法拉第旋转,用于这些研究。鉴定了两个不同的电子整合,其寿命基本不同的20和280 ps。它们的旋转松弛时间超过2ns,因此旋转寿命受电子寿命的限制。在高能光致发光尾部的步骤中,短寿命的光屏蔽电子对发射光谱的相对贡献变化。对于高于渗透阈值的能量,由于快速放松,电子状态是空的,而对于较低的能量,抑制了大多数光电子填充了位于那里的状态。

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  • 来源
    《Physical review》 |2020年第1期|014204.1-014204.8|共8页
  • 作者单位

    Experimentelle Physik 2 Technische Universitaet Dortmund 44221 Dortmund Germany Spin Optics Laboratory St. Petersburg State University 198504 St. Petersburg Russia;

    Ioffe Institute Russian Academy of Sciences 194021 St. Petersburg Russia;

    Ioffe Institute Russian Academy of Sciences 194021 St. Petersburg Russia;

    Experimentelle Physik 2 Technische Universitaet Dortmund 44221 Dortmund Germany Ioffe Institute Russian Academy of Sciences 194021 St. Petersburg Russia;

    Experimentelle Physik 2 Technische Universitaet Dortmund 44221 Dortmund Germany;

    Experimentelle Physik 2 Technische Universitaet Dortmund 44221 Dortmund Germany Ioffe Institute Russian Academy of Sciences 194021 St. Petersburg Russia;

    Experimentelle Physik 2 Technische Universitaet Dortmund 44221 Dortmund Germany Ioffe Institute Russian Academy of Sciences 194021 St. Petersburg Russia;

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