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首页> 外文期刊>Physical review.B.Condensed matter and materials physics >Static magnetic proximity effects and spin Hall magnetoresistance in Pt/Y_3Fe_5O_(12) and inverted Y_3Fe_5O_(12)/Pt bilayers
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Static magnetic proximity effects and spin Hall magnetoresistance in Pt/Y_3Fe_5O_(12) and inverted Y_3Fe_5O_(12)/Pt bilayers

机译：Pt / Y_3FE_5O_（12）中静态磁性接近效应和旋转霍米磁阻，并倒置Y_3FE_5O_（12）/ PT双层

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摘要

The magnetic state of heavy metal Pt thin films in proximity to the ferrimagnetic insulator Y_3Fe_5O_(12) has been investigated systematically by means of x-ray magnetic circular dichroism and x-ray resonant magnetic reflectivity measurements combined with angle-dependent magnetotransport studies. To reveal intermixing effects as the possible cause for induced magnetic moments in Pt, we compare thin film heterostructures with different orders of the layer stacking and different interface properties. For standard Pt layers on Y_3Fe_5O_(12) thin films, we do not detect any static magnetic polarization in Pt. These samples show an angle-dependent magnetoresistance behavior, which is consistent with the established spin Hall magnetoresistance. In contrast, for the inverted layer sequence, Y_3Fe_5O_(12) thin films grown on Pt layers. Pt displays a finite induced magnetic moment comparable to that of all-metallic Pt/Fe bilayers. This magnetic moment is found to originate from finite intermixing at the Y_3Fe_5O_(12)/Pt interface. As a consequence, we found a complex angle-dependent magneloresistance indicating a superposition of the spin Hall and the anisotropic magnetoresistance in these types of samples. Both effects can be disentangled from each other due to their different angle dependence and their characteristic temperature evolution.
机译：通过X射线磁性圆形二色性和X射线共振磁反射率测量系统地研究了靠近亚铁磁性绝缘体Y_3FE_5O_（12）的重金属Pt薄膜磁心。为了揭示掺杂效应作为Pt中诱导磁矩的可能原因，我们将薄膜异质结构与层堆叠不同的次数和不同的界面特性进行比较。对于Y_3FE_5O_（12）薄膜上的标准PT层，我们不会检测到PT中的任何静态磁极化。这些样品显示出角度依赖性磁阻行为，其与已建立的旋转霍米磁阻一致。相反，对于倒立的层序列，在PT层上生长的Y_3FE_5O_（12）薄膜。 PT显示有限诱导的磁矩，与全金属Pt / Fe双层相当。发现该磁矩源自Y_3FE_5O_（12）/ PT接口处的有限混合。因此，我们发现了一种复杂的角度依赖性菱视性，表明旋转厅的叠加和这些类型样品中的各向异性磁阻。由于其不同的角度依赖性及其特征温度演化，这两种效果都可以彼此分开。

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  • 来源
    《Physical review.B.Condensed matter and materials physics》 |2020年第21期|214438.1-214438.13|共13页
  • 作者

    Stephan Gepraegs; Christoph Klewe; Sibylle Meyer; Dominik Graulich; Felix Schade; Marc Schneider; Sonia Francoual; Stephen P. Collins; Katharina Ollefs; Fabrice Wilhelm; Andrei Rogalev; Yves Joly; Sebastian T. B. Goennenwein; Matthias Opel; Timo Kuschel; Rudolf Gross;

  • 作者单位

    Walther-Meissner-Institut Baverische Akademie der Wissenschaften 85748 Garching Germany;

    Advanced Light Source Lawrence Berkeley National Laboratory Berkeley California 94720 USA;

    Walther-Meissner-Institut Baverische Akademie der Wissenschaften 85748 Garching Germany;

    Center for Spinelectronic Materials and Devices Department of Physics Bielefeld University 33615 Bielefeld Germany;

    Walther-Meissner-Institut Baverische Akademie der Wissenschaften 85748 Garching Germany;

    Walther-Meissner-Institut Baverische Akademie der Wissenschaften 85748 Garching Germany;

    Deutsches Elektronen-Synchrotron DESY 22607 Hamburg Germany;

    Diamond Light Source Harwell Science and Innovation Campus Didcot Oxfordshire OX11 0DE United Kingdom;

    European Synchrotron Radiation Facility (ESRF) 38043 Grenoble Cedex 9 France Faculty of Physics and Center for Nanointegration Duisburg-Essen (CENIDE) Universitaet Duisburg-Essen 47057 Duisburg Germany;

    European Synchrotron Radiation Facility (ESRF) 38043 Grenoble Cedex 9 France;

    European Synchrotron Radiation Facility (ESRF) 38043 Grenoble Cedex 9 France;

    University Grenoble Alpes CNRS Grenoble INP Institut Neel 38000 Grenoble France;

    Technische Universitaet Dresden 01069 Dresden Germany;

    Walther-Meissner-Institut Baverische Akademie der Wissenschaften 85748 Garching Germany;

    Center for Spinelectronic Materials and Devices Department of Physics Bielefeld University 33615 Bielefeld Germany;

    Walther-Meissner-Institut Baverische Akademie der Wissenschaften 85748 Garching Germany Physik-Department Technische Universitaet Muenchen 85748 Garching Germany Munich Center for Quantum Science and Technology (MCQST) 80799 Muenchen Germany;

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