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首页> 外文期刊>Physical review.B.Condensed matter and materials physics >Giant tunnel electroresistance in ferroelectric tunnel junctions with metal contacts to two-dimensional ferroelectric materials
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Giant tunnel electroresistance in ferroelectric tunnel junctions with metal contacts to two-dimensional ferroelectric materials

机译：巨型隧道在铁电隧道交配中的电气隧道与金属触点到二维铁电材料

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摘要

Two-dimensional (2D) ferroelectric materials (FEMs) and their application in ferroelectric tunnel junctions (FTJs) have attracted a great deal of attention during the past several years due to their great potential in nonvolatile memory devices. Particularly, the all-2D FTJs. which have only atomic-layer thickness, have been demonstrated to show very high tunnel electroresistance (TER) ratio. Nevertheless, to better integrate with the present semiconductor technology, it is necessary to consider metal contacts in the construction of FTJs with 2D FEMs. However, due to the unknown interaction between traditional metals and 2D FEMs, it is not clear whether ferroelectricity still persists when the 2D FEMS are in contact with metals and whether the corresponding FTJs exhibit high TER effect as demanded for memory devices. To probe this, we construct FTJs with top contact between Au(010) and In_2Se_3, a 2D FEM with out-of-plane ferroelectric polarization. By density functional calculations combined with a nonequilibrium Green function technique, we find that not only the ferroelectricity still persists in the metal/FEM contact, but also a giant TER ratio as high as 10~4% is achieved. The giant TER arises from the change of the metal/FEM contact from a Schottky type to an Ohmic type accompanying with the ferroelectric polarization reversal. In the meantime, the tunnel barrier height between Au(010) and In_2Se_3 is zero, which means good ability of electron injection from metal to semiconductor and low contact resistance. Our study suggests that, by properly selecting the metal materials, giant TER ratio and high performance can be achieved in FTJs constructed with 2D FEMs and metal contacts.
机译：二维（2D）铁电材料（FEMS）及其在铁电隧道交叉路口（FTJS）的应用在过去几年中引起了大量的关注，因为它们在非易失性存储器件中的巨大潜力。特别是，All-2D FTJS。已经证明了仅具有原子层厚度以显示出非常高的隧道电钻（TER）比率。然而，为了更好地与本发明的半导体技术集成，有必要考虑使用2D FEM的FTJS建造金属接触。然而，由于传统金属和2D FEM之间的未知相互作用，目前尚不清楚铁电性仍然持续存在，当2D FEMS与金属接触时仍然存在，并且相应的FTJS是否表现出对存储器件的要求表现出高的TER效果。为了探讨这一点，我们在Au（010）和In_2Se_3之间的顶部接触，2D FEM与具有外平面外铁电偏振之间的2D FEM之间的FTJ。通过密度函数计算结合非QuiLibib函数技术，我们发现不仅铁电性仍然持续在金属/有限元接触中，而且达到高达10〜4％的巨型比例。巨型TER由肖特基式改变金属/有限元接触的变化，与铁电极极化反转伴随的欧姆型。同时，AU（010）和IN_2SE_3之间的隧道屏障高度为零，这意味着电子注入从金属到半导体和低接触电阻的良好能力。 Our study suggests that, by properly selecting the metal materials, giant TER ratio and high performance can be achieved in FTJs constructed with 2D FEMs and metal contacts.

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  • 来源
    《Physical review.B.Condensed matter and materials physics》 |2021年第12期|125414.1-125414.7|共7页
  • 作者

    Lili Kang; Peng Jiang; Hua Hao; Yanhong Zhou; Xiaohong Zheng; Lei Zhang; Zhi Zeng;

  • 作者单位

    Key Laboratory of Materials Physics Institute of Solid State Physics HFIPS Chinese Academy of Sciences Hefei 230031 China Science Island Branch of Graduate School University of Science and Technology of China Hefei 230026 China;

    Key Laboratory of Materials Physics Institute of Solid State Physics HFIPS Chinese Academy of Sciences Hefei 230031 China Science Island Branch of Graduate School University of Science and Technology of China Hefei 230026 China;

    Key Laboratory of Materials Physics Institute of Solid State Physics HFIPS Chinese Academy of Sciences Hefei 230031 China Science Island Branch of Graduate School University of Science and Technology of China Hefei 230026 China;

    College of Science East China Jiao Tong University Nanchang Jiangxi 330013 China;

    Key Laboratory of Materials Physics Institute of Solid State Physics HFIPS Chinese Academy of Sciences Hefei 230031 China Science Island Branch of Graduate School University of Science and Technology of China Hefei 230026 China;

    State Kex Laboratory of Quantum Optics and Quantum Optics Devices Institute of laser Spectroscopy Shanxi University Taiyuan 030006 China Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan 030006 China;

    Key Laboratory of Materials Physics Institute of Solid State Physics HFIPS Chinese Academy of Sciences Hefei 230031 China;

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