Partial discharge measurement and analysis in PPIs

著录项

• 来源
  《Power Electronics, IET》 |2019年第1期|138-146|共9页
• 作者

  Fu Pengyu; Zhao Zhibin; Li Xuebao; Cui Xiang; Wen Teng; Yang Zhuodong; Mo Shenyang; Zhang Peng;

  展开▼
• 作者单位

  North China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewabl, Beijing 102206, Peoples R China;

  North China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewabl, Beijing 102206, Peoples R China;

  North China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewabl, Beijing 102206, Peoples R China;

  North China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewabl, Beijing 102206, Peoples R China;

  North China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewabl, Beijing 102206, Peoples R China;

  North China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewabl, Beijing 102206, Peoples R China;

  North China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewabl, Beijing 102206, Peoples R China;

  State Grid Corp China, Global Energy Interconnect Res Inst, Power Semicond Dept, Beijing 102211, Peoples R China;

  展开▼
• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  semiconductor device reliability; partial discharge measurement; insulated gate bipolar transistors; failure analysis; UV images; phase-resolved PD analysis method; PPIs; electric field reinforcement areas; electric field analysis; observed PD; critical electric field; PD inception voltage; electrical insulation capability; press-pack insulated gate bipolar transistors; insulation failure mechanism; press-pack IGBT submodule; dedicated PD measurement system; PD-induced insulation failure phenomenon; partial discharge measurement; elementary structures;

  机译：半导体器件可靠性;局部放电测量;绝缘栅双极晶体管;故障分析;UV图像;相分辨PD分析方法;PPI;电场增强区域;电场分析;观察到的PD;临界电场;PD起始电压;电绝缘性能;压紧绝缘栅双极晶体管;绝缘破坏机理;压紧IGBT子模块;专用PD测量系统;PD引起的绝缘破坏现象;局部放电测量;基本结构;