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首页> 外文期刊>Power Electronics, IET >Predictive dead time controller for GaN-based boost converters
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Predictive dead time controller for GaN-based boost converters

机译：GaN基升压转换器的预测死区时间控制器

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摘要

A dynamic dead time controller is presented, specifically intended to operate in synchronous boost converters based on GaN field-effect transistor switches. These transistors have a reduced stored charge with respect to silicon metal-oxide-semiconductor field-effect transistors with similar breakdown voltage and series resistance, and can operate at higher frequencies with reduced switching losses. On the other hand, the voltage drop in reverse conduction is typically more than doubled with respect to silicon devices resulting in relevant power losses during the free-wheeling phases. Therefore, dynamic control of dead time can be profitably applied even in converters operating in the tens of volts range. The device presented in this study controls the switching delays taking into account both variations of the fall/rise times and of the turn-off/on delays, in order to keep dead time within a range of a few nanoseconds above its minimum value. A discrete-component prototype was designed, built in a synchronous boost converter and extensively tested at 1-2 MHz switching frequency, in a range of operating parameters corresponding to significant variations of the switching times (currents in the 1-6 A range, output voltage up to 50 V). The prototype demonstrated the capability to match dead time to actual operating conditions with a smooth and fast transient response.
机译：提出了一种动态死区时间控制器，该控制器专门用于在基于GaN场效应晶体管开关的同步升压转换器中工作。相对于具有类似击穿电压和串联电阻的硅金属氧化物半导体场效应晶体管，这些晶体管的存储电荷减少，并且可以在更高的频率下工作且开关损耗降低。另一方面，相对于硅器件，反向传导中的电压降通常是两倍以上，从而导致在续流阶段产生相关的功率损耗。因此，即使在几十伏特范围内工作的转换器中，空载时间的动态控制也可以有益地应用。这项研究中提出的设备要同时考虑下降/上升时间和关闭/接通延迟的变化，从而控制开关延迟，以便将空载时间保持在比其最小值高出几纳秒的范围内。设计了一个分立元件原型，该器件内置于同步升压转换器中，并在1-2 MHz开关频率下进行了广泛的测试，其工作参数范围与开关时间的显着变化相对应（电流在1-6 A范围内，输出电压高达50 V）。原型展示了以平稳，快速的瞬态响应使空载时间与实际工作条件相匹配的能力。

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