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SiC trench MOSFET with self-biased p-shield for low R and low OFF-state oxide field

机译：具有自偏置p屏蔽的SiC沟槽MOSFET，具有低R和低OFF状态的氧化场

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摘要

A SiC trench metal-oxide-semiconductor field-effect transistor (MOSFET) with a self-biased p-shield (SBS-MOS) is proposed and comprehensively studied. The p-shield region is used to reduce the high oxide field at the OFF-state, which would otherwise be detrimental to the device long-term reliability. A self-biasing network is designed to raise the potential of the p-shield in the SBS-MOS, so that the parasitic junction field effect transistor (JFET) is driven synchronously with the MOS-gate. Mixed-mode numerical simulations are carried out to study the performance of the proposed device. The SBS-MOS boasts a reduced specific ON-resistance () compared with the trench MOSFET with a grounded p-shield (GS-MOS), by the reduction of the JFET resistance and/or further down-scaling of the cell size. To synchronously drive the JFET region, only a slightly larger gate charge is required for the SBS-MOS. Therefore, a low OFF-state oxide field, a low and a low are simultaneously achieved in the proposed SBS-MOS.
机译：提出并全面研究了具有自偏置p屏蔽（SBS-MOS）的SiC沟槽金属氧化物半导体场效应晶体管（MOSFET）。 p屏蔽区用于减少OFF态下的高氧化场，否则会损害器件的长期可靠性。设计了一个自偏置网络，以提高SBS-MOS中p屏蔽的电势，从而使寄生结型场效应晶体管（JFET）与MOS栅极同步驱动。进行了混合模式数值模拟以研究所提出设备的性能。与具有接地p屏蔽的沟槽MOSFET（GS-MOS）相比，SBS-MOS具有降低的特定导通电阻（），这是因为JFET电阻减小和/或单元尺寸进一步缩小。为了同步驱动JFET区域，SBS-MOS仅需要稍大的栅极电荷。因此，在所提出的SBS-MOS中，同时实现了低截止态氧化物场，低态和低态。

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