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Investigation of SiC trench MOSFET with floating islands

机译：浮岛式SiC沟槽MOSFET的研究

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摘要

The silicon carbide trench metal-oxide-semiconductor field-effect transistors (SiC UMOSFET) with P+ floating island (FLI) which shields the gate oxide at the bottom of the gate trench from the high electric field during the blocking state and enhances the breakdown voltage (BV), is presented in this study using two-dimensional simulations. The effects of doping concentration, length and position of FLI on BV, electric field distribution and specific on-resistance (Ron,sp) are studied, thereby providing particularly useful guidelines for the design of this new type of device when considering the breakdown of the gate oxide layer. For the suitable device design, the results indicate that BV and Baliga figure of merit are, respectively, increased by 150 and 439% compared with a conventional SiC UMOSFET. At the same time, the SiC FLI UMOSFET has smaller gate-drain capacitance and better switching performance compared with the conventional UMOSFET on the condition of the same drift layer parameters. FLI introduced have almost no influence on the recovery characteristics of body diode.
机译：具有P +浮岛（FLI）的碳化硅沟槽金属氧化物半导体场效应晶体管（SiC UMOSFET），在阻挡状态期间将栅极沟槽底部的栅极氧化物与高电场隔离开来，并提高了击穿电压（BV），是使用二维模拟在这项研究中提出的。研究了掺杂浓度，FLI的长度和位置对BV，电场分布和比导通电阻（Ron，sp）的影响，从而为考虑这种器件击穿的这种新型器件的设计提供了特别有用的指导。栅氧化层。对于合适的器件设计，结果表明，与常规SiC UMOSFET相比，BV和Baliga品质因数分别提高了150％和439％。同时，在相同漂移层参数的条件下，与常规UMOSFET相比，SiC FLI UMOSFET具有较小的栅漏电容和更好的开关性能。引入的FLI对体二极管的恢复特性几乎没有影响。

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