Practical implementation of a silicon carbide-based 300 kHz, 1.2 kW hard-switching boost-converter and comparative thermal performance evaluation

著录项

• 来源
  《Power Electronics, IET》 |2015年第3期|333-341|共9页
• 作者

  Taekyun Kim; Minsoo Jang; Agelidis Vassilios G.;

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• 作者单位

  Sch. of Electr. Eng. & Telecommun., Univ. of New South Wales, Sydney, NSW, Australia;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  DC-DC power convertors; elemental semiconductors; failure analysis; performance evaluation; photovoltaic power systems; power generation reliability; silicon; silicon compounds; solar power stations; switching convertors; thermal engineering; wide band gap semiconductors; DC-DC boost converter; MOSFETs; PCS; PV energy system failures; Si; SiC; enhanced reliability; frequency 300 kHz; heat extraction mechanisms; natural convection heatsink; power 1.2 kW; power conditioning system; power semiconductors; principal reliability issues; silicon carbide-based hard-switching boost-converter; silicon metal-oxide-semiconductor field-effect transistors; solar PV pre-regulator; solar photovoltaic energy system failures; temperature 25 degC to 150 degC; thermal management; thermal performance evaluation; thermal performance evaluations;

  机译：DC-DC电源转换器;元素半导体;故障分析;性能评估;光伏发电系统;发电可靠性;硅;硅化合物;太阳能电站;开关转换器;热工程;宽带隙半导体;DC-DC升压转换器;MOSFET;PCS;PV能源系统故障;Si;SiC;增强的可靠性;频率300 kHz;散热机制;自然对流散热器;功率1.2 kW;功率调节系统;功率半导体;主要可靠性问题;基于碳化硅的硬开关升压-转换器;金属硅氧化物半导体场效应晶体管;太阳能光伏预调节器;太阳能光伏能源系统故障;温度25摄氏度至150摄氏度;热管理;热性能评估;热性能评估;