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首页> 外文期刊>Power Electronics, IET >Estimation of transient surge energy transferred with associated time delays for individual components of surge protector circuits
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Estimation of transient surge energy transferred with associated time delays for individual components of surge protector circuits

机译：估算浪涌保护器电路各个组件的瞬态浪涌能量以及相关的时延

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摘要

Modern semiconductor technology is vulnerable to transient surges such as lightning. Transient voltage suppressor systems (TVSSs), which are installed to protect modern electronics, use non-linear components such as varistors and transient voltage suppressor diodes in their design. In the case of low-voltage (1000 V and less) AC power circuits, there is no clear approach to estimate the energy absorption and associated time delays in individual components in relation to the propagated transient surge. Numerical simulation techniques can be used to analyse the phenomenon of surge propagation within a TVSS and estimate the energy transferred to each component with associated time delays. Suitable mathematical models must be used for the non-linear components. This study presents the development of reasonably accurate models for the non-linear circuit elements and formulation of state equations for the TVSS, together with simulation results; results are experimentally validated using a lightning surge simulator. The method of analysing surge propagation presented here could be extended to analyse the phenomenon of surge propagation within power conversion stages which buffer the complex electronic circuits and the power source. The results discussed here indicate that the theoretical energy calculations are within 10% of the experimental results for the individual circuit elements.
机译：现代半导体技术很容易受到闪电等瞬态电涌的影响。为保护现代电子设备而安装的瞬态电压抑制器系统（TVSS）在设计中使用了非线性元件，例如压敏电阻和瞬态电压抑制器二极管。在低压（1000 V及以下）交流电源电路中，没有明确的方法来估计与传播的瞬态浪涌有关的各个组件中的能量吸收和相关的时延。数值模拟技术可用于分析TVSS内的电涌传播现象，并估计传递给每个组件的能量以及相关的时延。非线性分量必须使用合适的数学模型。这项研究提出了非线性电路元件的合理准确模型的开发以及TVSS的状态方程的制定，以及仿真结果。使用雷电冲击模拟器对结果进行了实验验证。此处介绍的分析电涌传播的方法可以扩展为分析在缓冲复杂电子电路和电源的功率转换级中电涌传播的现象。此处讨论的结果表明，单个电路元件的理论能量计算在实验结果的10％以内。

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