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首页> 外文期刊>Power Electronics, IET >Low-leakage 4H-SiC junction barrier Schottky rectifier with sandwich P-type well
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Low-leakage 4H-SiC junction barrier Schottky rectifier with sandwich P-type well

机译：具有三明治P型阱的低泄漏4H-SiC结势垒肖特基整流器

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摘要

4H-SiC junction barrier Schottky (JBS) rectifier with sandwich P-type well (SPW JBS) is investigated by simulation. For this structure, the top and bottom of P grids are replaced by low-doped P (LDP) region based on the common JBS rectifier. The forward and reverse characteristics of SPW JBS rectifier have been compared with those of common JBS rectifier at different temperatures. The reverse current density of SPW JBS rectifier is about 2.4 × 10 times of common JBS rectifier at −800 V bias voltage. The upper LDP of SPW JBS is helpful to give a reduction in forward voltage drop. The spreading current and tunnelling current of SPW JBS rectifier are lower, because the depletion layer width in lower LDP is larger than that in P grid region at the same reverse voltage. As a result, the breakdown voltage of SPW JBS rectifier increases by 83.5% compared with that of common JBS rectifier. The on/off (1 V/ −500 V) current ratios of SPW JBS and common JBS rectifiers are 3.8 × 10 and 1.2 × 10, respectively. In addition, the figure of merit of SPW JBS rectifier is 347, which is two times larger than that of common JBS rectifier.
机译：通过仿真研究了夹层P型阱（SPW JBS）的4H-SiC结势垒肖特基（JBS）整流器。对于这种结构，P栅格的顶部和底部被基于公共JBS整流器的低掺杂P（LDP）区域取代。比较了SPW JBS整流器与普通JBS整流器在不同温度下的正向和反向特性。在-800 V偏置电压下，SPW JBS整流器的反向电流密度约为普通JBS整流器的2.4×10倍。 SPW JBS的上部LDP有助于减小正向电压降。 SPW JBS整流器的扩散电流和隧穿电流较低，这是因为在相同反向电压下，下部LDP的耗尽层宽度大于P栅极区域的耗尽层宽度。结果，SPW JBS整流器的击穿电压与普通JBS整流器相比增加了83.5％。 SPW JBS和普通JBS整流器的开/关（1 V / -500 V）电流比分别为3.8×10和1.2×10。另外，SPW JBS整流器的品质因数为347，是普通JBS整流器的两倍。

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