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首页> 外文期刊>Power Electronics, IET >Temperature–humidity–bias testing on insulated-gate bipolartransistor modules – failure modes and acceleration due to high voltage
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Temperature–humidity–bias testing on insulated-gate bipolartransistor modules – failure modes and acceleration due to high voltage

机译：绝缘栅双极晶体管模块的温度-湿度-偏置测试-高压导致的故障模式和加速

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摘要

The temperature–humidity–bias (THB) test is the standard for accelerated stress testing with respect to corrosion and other humidity driven degradation mechanisms. Usually, 1000 h tests at 85°C and 85% relative humidity are used to predict up to 25 years of operation. The bias is usually limited to 80 V in order to fulfil the respective standards. Nevertheless, THB tests on 1700 V insulated-gate bipolar transistor (IGBT)-modules have shown that higher bias is a more severe test condition. The failure analysis confirmed Cu- and Ag-dendrites and corrosion of the aluminium (Al)-chip-metallisation as the relevant failure mechanisms. To determine the acceleration factor due to voltage, 1200 V IGBT modules were tested in THB at 780 V (65% of ) and 1080 V (90% of ). A characteristic degradation consisting of three phases has been identified. The second phase seems to be determined by Al corrosion and an acceleration factor of about two has been estimated from 780 to 1080 V. Within the third phase, the devices stabilised probably due to localised self-heating. Thus, this degradation mechanism is kind of self-limiting, but the higher leakage also increases the risk of thermal runaway especially when biased close to the rated collector–emitter voltage.
机译：温度-湿度-偏压（THB）测试是针对腐蚀和其他湿度驱动的降解机制进行加速应力测试的标准。通常，在85°C和85％相对湿度下进行1000小时测试可预测长达25年的运行时间。为了满足各个标准，通常将偏压限制在80V。尽管如此，在1700 V绝缘栅双极晶体管（IGBT）模块上进行的THB测试表明，较高的偏置是更严格的测试条件。失效分析证实了铜和银枝晶以及铝（Al）芯片金属化的腐蚀是相关的失效机理。为了确定由于电压引起的加速因子，在THB中以780 V（65％的）和1080 V（90％的）对1200 V IGBT模块进行了测试。已经鉴定出由三个阶段组成的特征降解。第二阶段似乎是由Al腐蚀决定的，并且从780到1080 V估计了约2的加速因子。在第三阶段内，设备可能由于局部自热而稳定。因此，这种降级机制是一种自我限制，但较高的泄漏量也会增加热失控的风险，尤其是当偏置电压接近额定集电极-发射极额定电压时。

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  • 来源
    《Power Electronics, IET》 |2015年第12期|2329-2335|共7页
  • 作者

    Zorn Christian; Kaminski Nando;

  • 作者单位

    Institute for Electrical Drives, Power Electronics, and Devices (IALB), University of Bremen, Germany;

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