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首页> 外文期刊>Power Electronics, IET >Evaluation of insulated gate bipolar transistor protection with ZnO thick films varistors
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Evaluation of insulated gate bipolar transistor protection with ZnO thick films varistors

机译：ZnO厚膜压敏电阻对绝缘栅双极晶体管保护的评估

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摘要

To have efficient protection of insulated gate bipolar transistor (IGBT) against various electrical voltage overshoots, screen-printed zinc oxide (ZnO) varistors have been developed using a planar structure. These varistors exhibit a breakdown voltage higher than 600 V and a non-linear coefficient up to 40. Some samples have been tested in real operations conditions to protect 1200 V IGBT in the case of unclamped inductive switching operations (default on the freewheeling diode). The results have shown the high efficiency of the designed varistors by clamping the voltage overshoot appearing on the IGBT. Optimising of the fabrication process (mechanical pressure or not on ZnO layers, ZnO thickness, electrode and substrate nature), lead to dissipated energy density of 105 J/cm3.
机译：为了有效保护绝缘栅双极型晶体管（IGBT）免受各种电压过冲的影响，已经开发了使用平面结构的丝网印刷氧化锌（ZnO）压敏电阻。这些压敏电阻的击穿电压高于600 V，非线性系数最高为40。一些样品已在实际工作条件下进行了测试，以在未钳位的电感式开关操作（续流二极管默认）下保护1200 V IGBT。结果表明，通过钳位IGBT上出现的电压过冲，可以设计出高效率的压敏电阻。优化制造工艺（在ZnO层上施加机械压力或不施加机械压力，ZnO厚​​度，电极和衬底的性质）会导致耗散的能量密度为105 J / cm3。

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