Electron paramagnetic resonance studies of photorefractive crystals Ⅱ: Fe~(3+) doped Bi_(12)SiO_(20) with copper vapour laser illumination in 10-100 K range

N K PORWAL; R M KADAM; Y BABU; M D SASTRY; M D AGGARWAL; PUTCHA VENKATESWARLU

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Electron paramagnetic resonance studies of photorefractive crystals Ⅱ: Fe~(3+) doped Bi_(12)SiO_(20) with copper vapour laser illumination in 10-100 K range

机译：光折变晶体Ⅱ的电子顺磁共振研究：在10-100 K范围内用铜蒸气激光照射Fe〜（3+）掺杂的Bi_（12）SiO_（20）

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Photo-induced charge transfer and its kinetics were investigated in Bi_(12)SiO_(20) in 10-300 K temperature range, using EPR of Fe~(3+) centre, under in situ illumination with copper vapour laser (CVL). The decay kinetics was found to follow double exponential behaviour. Relaxation of the photo-induced electron transfer to the preillumination condition occurred even at 10 K. Shallow traps were, therefore, associated with the electron trapping, leading to a better understanding of the fast photorefractive response of BSO.

机译：利用Fe〜（3+）中心的EPR，在Bi_（12）SiO_（20）的10_300 K温度范围内，利用铜蒸气激光（CVL）在原位照射下研究了光诱导的电荷转移及其动力学。发现衰减动力学遵循双指数行为。甚至在10 K时，也会发生光致电子转移到预照明条件的松弛。因此，浅陷阱与电子陷阱相关，从而使人们对BSO的快速光折射响应有了更好的了解。

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来源
《Pramana》 |1997年第4期|p.929-935|共7页
作者
N K PORWAL; R M KADAM; Y BABU; M D SASTRY; M D AGGARWAL; PUTCHA VENKATESWARLU;
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收录信息美国《科学引文索引》(SCI);
原文格式 PDF
正文语种 eng
中图分类物理学;
关键词
electron paramagnetic resonance; bismuth silicon oxide; photorefraction; laser;

机译：电子顺磁共振;氧化铋铋;光折射;激光;

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Electron paramagnetic resonance studies of photorefractive crystals Ⅱ: Fe~(3+) doped Bi_(12)SiO_(20) with copper vapour laser illumination in 10-100 K range

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