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首页> 外文期刊>Proceedings of the Arkansas Academy of Science >Diagnostics of CdTe Electrodeposition by Rest Potential Voltammetry
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Diagnostics of CdTe Electrodeposition by Rest Potential Voltammetry

机译：静电位伏安法对CdTe电沉积的诊断

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摘要

Due to the extreme sensitivity of the partial elemental currents (i.e., i_(Cd), i_(Te)) and, hence, stoichiometry to deposition voltage, temperature, mass transport, and ambient light intensity during electrodeposition of semiconductor films, it is important to implement in-situ methods for monitoring the stoichiometry and related semiconductor efficacy of the growing film. We report investigation of open circuit rest potential (E_(oc)) voltammetry as one such method during electrodeposition of CdTe from aprotic electrolytes such as ethylene glycol. Plots of transient open circuit potential versus sweep voltage exhibit distinct transition and plateau structures corresponding to Te, CdTe, and Cd phases and correlating with the appearance/disappearance of photocurrent, x-ray diffraction evidence of the three phases, and optical obsorption spec-troscopy. In particular, the E_(oc) plateau corresponding to deposition of near-stoichiometric CdTe can be used to monitor and control the deposition process.
机译：由于部分元素电流（即i_（Cd），i_（Te））的极高灵敏度，因此，在电沉积半导体膜期间对沉积电压，温度，质量传输和环境光强度的化学计量比非常重要。实施现场方法来监测生长膜的化学计量和相关的半导体功效。我们报告开路静息电位（E_（oc））伏安法的调查，这是一种从非质子电解质（例如乙二醇）中电沉积CdTe的方法。瞬态开路电势与扫描电压的关系图显示出与Te，CdTe和Cd相相对应的独特的跃迁和平稳结构，并且与光电流的出现/消失，三相的X射线衍射证据以及光吸收光谱学相关。特别地，对应于接近化学计量的CdTe的沉积的E_（oc）平台可以用于监测和控制沉积过程。

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